Method for manufacture of ultra-thin film capacitor

DETAILED DESCRIPTION Broadly, according to the present invention, a suitable substrate is provided to which is applied a metal electrically conductive film electrode.
The substrate is usually a dielectric or semiconductor material.
The substrate and electrically conductive electrode film are then exposed to ion beam implantation of O+ or N+ ions to impregnate the surface of the metal with O+ or N+ ions.
The ion beam implantation of O+ and N+ ions is sufficient to provide a stoichiometric excess of O+ or N+ ions.
Thereafter, the substrate and electrically conductive film having implanted O+ or N+ ions is annealed under predetermined temperature and time conditions to stabilize the oxide structure which has been implanted into the surface of the electrically conductive film.
In an alternate embodiment of the present invention, a metal oxide coating is deposited on the metal coating.
The metal oxide coating is then treated with O+ or N+ ion beam implantation.
The provision of a metal oxide coating prior to the ion beam implantation step reduces the dosage level and time required to implant the O+ or N+ ions.