Method for manufacturing group III-V compound semiconductors

DETAILED DESCRIPTION It is an object of the present invention to provide a formation method whereby creation of strain and defects in the substrate and epitaxial layer are minimized, even during epitaxy conducted using a hetero substrate which has a different lattice constant and thermal expansion coefficient, and which affords an epitaxial layer that resists cracking even where a thick film is grown.
In order to achieve the aforementioned object, the Group III-V compound semiconductor manufacturing method employing epitaxy which pertains to the present invention comprises a step in which growing areas are produced using a mask patterned on a semiconductor substrate surface; a step in which Group III-V compound semiconductor having a lattice constant and thermal expansion coefficient different from those of the substrate is grown in the growing areas; and a step in which the Group III-V compound semiconductor is grown in the growing areas while forming facet structures, covering the mask material together with the Group III-V compound semiconductor in the adjacent growing areas, and the facet structures are then buried to planarize the surface.
The method for manufacturing a Group III-V compound semiconductor which pertains to the present invention comprises, in a Group III-V compound semiconductor layer epitaxy process, a step wherein growing areas are produced using a mask patterned on a semiconductor substrate surface; a step in which Group III-V compound semiconductor having a lattice constant and thermal expansion coefficient different from those of the substrate is grown in the growing areas; and a step in which the Group III-V compound semiconductor is grown in the growing areas while forming facet structures, covering the mask material together with the Group III-V compound semiconductor in the adjacent growing areas, and the facet structures are then buried to planarize the surface, the above steps being conducted repeatedly on the planarized surface.
The method for manufacturing a Group III-V compound semiconductor which pertains to the present invention further involves forming a Group III-V compound semiconductor film 12 consisting of the same material as the Group III-V compound semiconductor layer grown in the growing areas, or one having a similar lattice constant and thermal expansion coefficient, and then forming growing areas formed by a patterned mask material