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 Method for producing a radiation-emitting semiconductor chip

Details
Inventors: Eisert, Dominik; rle, Volker; Frank (Mü, nchen, DE); Zehnder, Ulrich;
Assignee: Osram GmbH (Munich, DE)
Primary Examiner: Cao; Phat X.
Assistant Examiner: Doan; Theresa T.
Attorney, Agent or Firm: Greenberg; Laurence A., Stemer; Werner H., Locher; Ralph E.

A semiconductor chip has a substrate that is in the form of a parallelepiped whose side surfaces are shaped as tilted parallelograms. Such a semiconductor chip has a high output efficiency and a homogeneous thermal load due to having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.

DETAILED DESCRIPTION It is accordingly an object of the invention to provide a method for producing a radiation-emitting semiconductor chip that overcomes the above-mentioned disadvantages of the prior art devices and methods of this general type, which has a good optical output and a uniform thermal load.
With the foregoing and other objects in view there is provided, in accordance with the invention, a radiation-emitting semiconductor chip.
The semiconductor chip contains an active layer having sides, and a substrate having a plurality of side surfaces bounding an extent of the active layer at the sides of the active layer.
At least two of the side surfaces are disposed at an acute angle, being tilted and forming parallelograms.
The object is achieved according to the invention by the semiconductor chip having at least two side surfaces that are provided with an acute angle and are in the form of parallelograms.
The prismatic configuration of the semiconductor chip with two tilted side surfaces in the form of parallelograms ensures that the light that emerges from the active layer can leave the semiconductor chip with a small number of reflections.
The majority of the light beams which leave the active layer in the direction of the base surface strike the inclined side surfaces and are reflected onto an opposite side surface, where they arrive at an angle which is less than the critical angle for total reflection.
At the same time, the semiconductor chip has a uniform cross section, so that the thermal load is homogeneous over the semiconductor chip.
This effectively avoids stresses in the semiconductor chip.
The semiconductor chip according to the invention thus has a homogeneous and low thermal load, in addition to the good optical output.
The invention is furthermore based on the object of providing a method for producing the semiconductor chip.
The object is achieved according to the invention by the semiconductor chips being separated along a separating surface that runs obliquely with respect to the surface



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