Method of etching crystalline material with etchant injection inlet

DETAILED DESCRIPTION The present invention has been accomplished in view of the various points as described above, and its object is to provide a fine working method of a crystalline material which cancels the problems of the prior art.
The present invention is particularly intended to provide a fine working method which can work a crystalline material into a complicated shape having a cross-section of reverse tapered shape or hollow shape which has been worked with difficulty in the prior art.
Another object of the present invention is to provide a fine working method of a crystalline material capable of forming any desired three-dimensional structure by applying an etching treatment on the region where ion injection is effected overlappingly.
Still another object of the present invention is to provide a fine working method of a crystalline material, which comprises forming an ion injection region in a crystalline material by irradiating a focused ion beam on a crystalline material and subsequently removing a predetermined region of said ion injection region by applying a chemical etching treatment, said method having the steps of: performing ion injection under the ion injecting conditions where no removal of said predetermined regions occurs even if the crystalline material may be exposed to an etchant, and removing the predetermined region of said ion injection region by injecting an etchant into the ion injection region formed by ion injection under said ion injecting conditions.