Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and device

DETAILED DESCRIPTION OF THE PRESENTLY PREFERRED EMBODIMENTS Explained below are embodiments of the invention with reference to the drawings.
In all figures illustrating the embodiments, identical or equivalent components are labeled with common reference numerals.
The embodiment explained below is directed to a case using a substrate including a region A of a certain crystal and regions B having a crystallographic property different from the region A and periodically aligned in form of islands in the region A as shown in FIG.
1A, and forming semiconductor devices on the substrate.
The regions B penetrate the substrate.
The regions are inferior to the region in terms of crystalline quality, and contain more crystal defects.
FIG.
1B shows a cross-sectional view taken along a line where the regions B appear closest to each other.
Although each region B generally has an arbitrary polygonal prismatic shape, FIG.
1 shows them in form of circular cylinders for simplicity (also in the description hereunder).
When a semiconductor laser is manufactured, semiconductor layers composing a device structure are sequentially grown on the substrate by metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxial growth, halide vapor phase epitaxial growth (HVPE), or the like.
Then, through further necessary steps of forming electrodes, etc.
and thereafter dividing the substrate and the semiconductor layers thereon into chips by dicing them by cleavage, for example, intended semiconductor devices are obtained.
In the manufacturing process, crystal defects of the base substrate propagate to the semiconductor layers grown thereon.
Therefore, the semiconductor layers accumulating on device regions containing regions B will be affected by influences of the defects, and will be inferior in property.
For example, in case of a light emitting diode or a semiconductor laser, if those defects exist in its emission region, then its emission property and reliability will be damaged.
Thus, to prevent the emission region, more broadly the active region, from adverse affection of the regions B, the following techniques are used