Method of manufacturing capacitor in semiconductor devices

DETAILED DESCRIPTION Accordingly, the present invention is contrived to substantially obviate one or more problems due to limitations and disadvantages of the related art, and an object of the present invention is to provide a method of manufacturing a capacitor in semiconductor devices capable of preventing decrease in the reliability and yield of the devices due to etch damage of a lower copper electrode, by forming a MIM (metal-insulator-metal) capacitor using copper as the lower electrode by means of chemical mechanical polishing process without using mask process and etch process.
In a preferred embodiment of the present invention, the method of manufacturing the capacitor in the semiconductor devices is characterized in that it comprises the steps of forming a lower copper electrode on a substrate, forming a photoresist pattern having a capacitor hole through which the lower copper electrode is exposed, hardening the surface of the photoresist pattern to form a photoresist hardening layer, forming a capacitor dielectric film and an upper electrode material layer on the photoresist hardening layer including the capacitor hole, polishing the upper electrode material layer and the capacitor dielectric film by means of chemical mechanical polishing process to form an upper electrode within the capacitor hole, and removing the photoresist pattern including the photoresist hardening layer.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
In another aspect of the present invention, it is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed