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Method of manufacturing semiconductor device
| Details |
Inventors: Inumiya, Seiji; Eguchi, Kazuhiro;
Assignee: Kabushiki Kaisha Toshiba (Tokyo, JP)
Primary Examiner: Picardat; Kevin M.
Assistant Examiner:
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the semiconductor substrate to an atmosphere containing an oxidant to form a silicon dioxide film at the interface between the semiconductor substrate and the film containing metal elements and silicon elements, and nitriding the film containing metal elements and silicon elements after forming the silicon dioxide film. |
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DETAILED DESCRIPTION OF THE INVENTION Embodiments of the present invention will be described hereinafter, by referring to the accompanying drawings.
In each of the embodiments, a high dielectric constant material containing metal elements and silicon elements is formed by a deposition method on a surface of a silicon semiconductor substrate.
Then, the interface between the high dielectric constant material film and silicon semiconductor substrate is oxidized via the high dielectric constant material film.
Subsequently, the high dielectric constant material film is nitrided.
The nitrided high dielectric constant material film is used typically as a gate insulating film of a MOSFET in a semiconductor device.
In a first embodiment, a method of forming the high dielectric constant material film by nitridation is disclosed, and in a second embodiment, a process of manufacturing an n-channel MOSFET in which the nitrided high dielectric constant material film is used in a gate structure composed of a gate electrode and a gate insulating film, is disclosed.
The first embodiment will be explained by referring to FIGS.
1 to 4.
FIGS.
1 to 4 are sectional views explaining the process of forming a high dielectric constant material film on a semiconductor substrate according to the first embodiment of the present invention.
A device isolation region (not shown) such as an STI (shallow trench isolation) is formed in a silicon semiconductor substrate 1, by using a conventional method.
Then, a film containing metal elements and silicon elements is formed on an exposed surface of the silicon semiconductor substrate 1.
The film contains oxygen or nitrogen or, in the alternative, the film contains oxygen and nitrogen.
In this embodiment, TEOS (tetra ethoxy silane) and HTB (hafnium tetra tertiary butoxide) are used as precursors of the film.
As the film containing metal elements and silicon elements, a hafnium silicate film 2 of about 3 nm in thickness is formed on the exposed surface of the silicon semiconductor substrate 1, using TEOS and HTB as precursors, by MOCVD (metal organic chemical vapor deposition) method (FIG
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MEMS 
