Method of manufacturing semiconductor devices

DETAILED DESCRIPTION In view of the aforementioned problems of the conventional techniques, a primary object of the present invention is to provide a method of manufacturing semiconductor devices which is capable of manufacturing large semiconductor devices that cannot be manufactured using the aforementioned conventional techniques.
Another object of the present invention is to provide a method of manufacturing semiconductor devices which is capable of forming a desired pattern having an area size larger than the field size that can be obtained in one exposure process step of an exposure device by dividing the desired pattern into a plurality of portions and then by conducting exposure on the divided patterns in a joined fashion.
Another object of the present invention is to provide a method of manufacturing semiconductor devices which is capable of forming on a semiconductor substrate a desired pattern having an area size larger than the field size that can be projected in one exposure process step of a reduction projection type exposure device by repeating the process of projecting a circuit pattern on the semiconductor substrate using the reduction projection type exposure device and thereby sequentially joining the circuit patterns with each other.
Another object of the present invention is to provide a method of manufacturing semiconductor devices which is capable of forming on a semiconductor substrate a desired pattern having an area size larger than the field size that can be projected in one exposure process step of a reduction projection exposure device by repeating the process of projecting a circuit pattern on the semiconductor substrate using the reduction projection type exposure device while sequentially connecting the projected patterns with each other.
The connecting portion between the adjacent circuit patterns is double projected to form a double exposure area.
Another object of the present invention is to provide a semiconductor device manufactured by a method of manufacturing semiconductor devices in which a desired pattern having an area size larger than the field size that can be projected in one exposure process step of a reduction projection type exposure device is formed on a semiconductor substrate by repeating the process of projecting a circuit pattern on the semiconductor substrate using the reduction projection type exposure device while sequentially connecting the projected patterns with each other