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Method of producing a diaphragm on a substrate
| Details |
Inventors: Evans, Alan G. R.; Farooqui, Mohammed M.;
Assignee: Spectrol Reliance Limited (Swindon, GB2)
Primary Examiner: Lacey; David L.
Assistant Examiner: Anderson; Andrew J.
Attorney, Agent or Firm:
The invention provides a method of producing on a substrate a diaphragm which is electrically isolated from the substrate. The method comprises obtaining a substrate (2) having a diaphragm(1) thereon which comprises a flexible central portion (1a) and a shouldered peripheral portion which supports the central portion (1a) above the substrate (2), applying a mask (6) over at least a part of the central portion (1a) and converting the unmasked portion (1b) of the diaphragm to a dielectric so as to electrically isolate the masked central portion (1a) of the diaphragm from the substrate (2). |
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DETAILED DESCRIPTION We claim: 1.
A method of producing on a substrate a diaphragm which is electrically isolated from the substrate, comprising the steps of: (a) obtaining a substrate having thereon a diaphragm comprising a flexible central portion and a shouldered peripheral portion which supports the central portion above the substrate, the diaphragm being formed from a material which is convertible to a dielectric; (b) applying a mask over at least a part of said central portion, and (c) converting the unmasked portion of the diaphragm to a dielectric, whereby to electrically isolate said masked central portion from the substrate.
2.
A method according to claim 1, wherein the diaphragm is formed on said substrate by providing on said substrate a sacrificial layer having at least one arm extending outwardly therefrom, providing a diaphragm layer over said sacrificial layer so that the diaphragm layer overlaps the periphery of said sacrificial layer except in the region of said at least one arm, and removing said sacrificial layer.
3.
A method according to claim 2, wherein said sacrificial layer is deposited on said substrate, said diaphragm layer is deposited over said sacrificial layer and said sacrificial layer is removed by etching.
4.
A method according to claim 2, which comprises sealing with a dielectric material the gap left by said at least one arm.
5.
A method according to claim 4, wherein said sacrificial layer is deposited on said substrate, said diaphragm layer is deposited over said sacrificial layer and said sacrificial layer is removed by etching.
6.
A method according to claim 5, wherein silicon dioxide is provided around the periphery of the diaphragm to provide a seal between the diaphragm and the substrate.
7.
A method according to claim 5, wherein the unmasked portion of the diaphragm is chemically converted to a dielectric.
8.
A method according to claim 7, wherein said substrate is formed from silicon, said diaphragm is formed from polysilicon, said mask is formed from silicon nitride and the unmasked portion of the diaphragm is converted to silicon dioxide
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