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Home MEMS Methods-for-fabricating-monolithic-device-containing-circuitry-and-suspended-microstructure

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Details
Inventors: Tsang, Robert W. K.; Core, Theresa A.;
Assignee: Analog Devices, Inc. (Norwood, MA)
Primary Examiner: Powell; William
Assistant Examiner:
Attorney, Agent or Firm: Wolf, Greenfield & Sacks, P.C.

A monolithic capacitance-type microstructure includes a semiconductor substrate, a plurality of posts extending from the surface of the substrate, a bridge suspended from the posts, and an electrically-conductive, substantially stationary element anchored to the substrate. The bridge includes an element that is laterally movable with respect to the surface of the substrate. The substantially stationary element is positioned relative to the laterally movable element such that the laterally movable element and the substantially stationary element form a capacitor. Circuitry may be disposed on the substrate and operationally coupled to the movable element and the substantially stationary element for processing a signal based on a relative positioning of the movable element and the substantially stationary element. A method for fabricating the microstructure and the circuitry is disclosed.

DETAILED DESCRIPTION According to a first aspect of the invention, a process for fabricating a monolithic device is provided.
The process comprises the steps of providing a substrate having a first surface region for formation of a circuit and a second surface region for formation of a suspended microstructure, forming transistors in the first surface region of the substrate, forming a spacer layer over the second surface region of the substrate, forming at least one anchor opening in the spacer layer, forming a patterned polysilicon layer over the spacer layer and the anchor opening to define the microstructure, forming conductive paths for electrically interconnecting the transistors to form the circuit and for electrically interconnecting the microstructure to the circuit, and removing the spacer layer to release the suspended microstructure.
According to another aspect of the invention, a process for fabricating a suspended microstructure on a substrate is provided.
The process comprises the steps of forming a spacer layer over the substrate, forming at least one anchor opening in the spacer layer, forming a polysilicon layer over the spacer layer and the anchor opening, implanting ions into the polysilicon layer to establish a desired conductivity of the polysilicon layer, patterning the polysilicon layer to define the suspended microstructure, and removing the spacer layer to release the suspended microstructure.



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