Methods of forming magnetoresisitive devices

DETAILED DESCRIPTION In one aspect, the invention encompasses a method of forming a magnetoresistive device.
A stack is formed, with the stack comprising a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers.
At least one of the first magnetic layer, second magnetic layer, and non-magnetic layer is etched with a primarily physical etch process in a reaction chamber to expose a portion of the etched layer.
While the stack remains in the reaction chamber, a protective material is deposited over the exposed portion.
In another aspect, the invention encompasses another method of forming a magnetoresistive device.
A stack is provided.
The stack comprises a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer.
The second magnetic layer is etched with a primarily physical etch process in a reaction chamber to pattern the second magnetic layer into a block having at least one exposed sidewall.
While the stack remains in the reaction chamber, a protective material is deposited over the at least one exposed sidewall.