Image sensor or LCD including switching pin diodes |
| OF CERTAIN EMBODIMENTS OF THIS INVENTION Referring now more particularly to the accompanying ... |
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Photoconductor-on-active-pixel (POAP) sensor utilizing equal-potential pixel electrodes |
| The active pixel sensor of the invention includes, in one embodiment, a solid state radiation ... |
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Off substrate flip-chip apparatus |
| OF THE INVENTION The latching off-chip arrangement of the present invention enables the prerelease ... |
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Correlating optical motion detector |
| In accordance with the present invention, an optical motion detector is comprised of a single chip ... |
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CCD output signal processing circuit for use in an image pick-up device |
| It is an object of the present invention to provide a CCD output signal generating circuit for ... |
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Semiconductor integrated circuit and method of making the same |
| It is an object of the present invention to provide a semiconductor integrated circuit device in ... |
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Solid state imaging device |
| An object of the present invention is to provide a solid state imaging device having a conventional ... |
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Method of visualizing minute particles |
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Micro-electromechanical system device
| Details |
Inventors: Huang, Jenn-Hwa; Coffman, Samuel L.; Sun, Xi-Qing; Xu, Ji-Hai; Parsey, Jr., John Michael;
Assignee: Motorola, Inc. (Schaumburg, IL)
Primary Examiner: Luebke; Renee
Assistant Examiner: Nguyen; Nhung
Attorney, Agent or Firm:
A Micro-Electromechanical Systems (MEMS) device (100) having conductively filled vias (141). A MEMS component (124) is formed on a substrate (110). The substrate has conductively filled vias (140) extending therethrough. The MEMS component (124) is electrically coupled to the conductively filled vias (140). The MEMS component (124) is covered by a protective cap (150). An electrical interconnect (130) is formed on a bottom surface of the substrate (110) for transmission of electrical signals to the MEMS component (124), rather than using wirebonds. |
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DETAILED DESCRIPTION OF THE DRAWINGS FIG. 3 illustrates an initial stage in the manufacture of a MEMS device 100. What is shown in FIG. 3 is a cross-sectional side view of a packaging substrate 110 having surfaces 111 and 112 and a plurality of vias 141 selectively formed therein. Conventional photolithographic methods may be employed to form vias 141. It should be understood the that the techniques for forming vias 141 is not a limitation of the present invention. Now referring to FIG. 4, MEMS device 100 is shown at a later stage of manufacture. Vias 141 are filled with an electrically conductive material such as, for example, copper, gold, aluminum, alloys of copper, alloys of gold, and the like, to form conductively filled vias 140. It should be noted that a filled via does not need to be completely filled to be considered a filled via. Rather, a filled via can be partially filled as long as electrical contact can be made from surface 111 to surface 112. A conductive layer is patterned on surface 111 of packaging substrate 110 to form electrical interconnects 127, 129, and 130, which are in electrical contact with corresponding conductively filled vias 140. Suitable materials for electrical interconnects 130 include aluminum, gold, copper, nickel, tin, alloys of aluminum, gold, copper, nickel or tin, cobalt, chromium, suicides of tungsten or tantalum, filled epoxies, filled silicones, or the like. It should be understood that electrical interconnects 130 are an optional feature. A conductive layer is patterned on surface 112 of packaging substrate 110. This conductive layer forms the basis for several of the MEMS components 124 such as MEMS switches and MEMS sensors. By way of example, the conductive layer may be patterned to form control leads 121, transmission terminals 122, control electrode 125, and travel stops 123. Control leads 121 are electrically coupled to corresponding electrical interconnects 130 by conductively filled vias 140. In this example, control leads 121 conduct the actuation voltage in the case of a MEMS switch, which switch may be formed from the conductive layer on surface 112
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