Nucleation and deposition of Pt films using ultraviolet irradiation

DETAILED DESCRIPTION The present invention overcomes the drawbacks of patterning platinum group metals by conventional methods and provides a CVD method which produces a smooth, uniform, continuous film of a platinum group metal which also has good step coverage.
The present invention also allows the platinum film to be patterned onto a substrate.
The invention includes depositing the platinum metal group in conjunction with ultraviolet light using a CVD process followed by low temperature annealing in order to remove carbon in the platinum group metal.
The invention relates to the formation of a continuous film layer of platinum group metal by CVD.
The invention may find many uses where a thin uniform layer of platinum group metal is needed.
For example, the invention is useful in the computer microchip industry, such as for the undercoating electrode of a dielectric memory in a semiconductor device.
The invention relates to a chemical vapor deposition method to deposit the platinum group metal onto a surface.
The starting material for preparation of the platinum group metal film may be any organic platinum group metal precursor suitable for deposition of the platinum group metal.
The invention provides a process for depositing a platinum metal on a substrate which includes the steps of flowing a gas having adsorbed therein a predetermined thickness of platinum metal precursor over the substrate at a selected temperature and pressure in the presence of ultraviolet light or flowing the platinum metal precursor over a substrate and then irradiating the substrate with ultraviolet light.
The selected operating temperature is a temperature at which the platinum group metal deposits on the substrate, but less than a temperature at which the platinum group metal fails to smoothly deposit on the substrate.
The pressure at which the process operates is a pressure at which the platinum group metal will deposit on the substrate in a continuous film while maintaining good step coverage.
The substrate is a non-silicon containing film