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Thin film actuated mirror array in an optical projection system |
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Mechanical grating device |
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Reduced formation of asperities in contact micro-structures |
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Low Cu percentages for reducing shorts in AlCu lines |
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Avalanche photo diode with quantum well layer |
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Optical device, optical module, semiconductor apparatus and its manufacturing method, and electronic apparatus
| Details |
Inventors: Imaoka, Norio;
Assignee: Seiko Epson Corporation (Tokyo, JP)
Primary Examiner: Clark; S. V.
Assistant Examiner:
Attorney, Agent or Firm: Oliff & Berridge, PLC
The invention provides an optical device that enables a mutual electrical connection between the stacked semiconductor substrates to be realized with ease and high reliability and to provide for miniaturization. The optical device has a first semiconductor substrate having an optical part and a first pad, a second semiconductor substrate having an integrated circuit and a second pad which is stacked under the first semiconductor substrate, a through-hole continuously extending through the first and the second semiconductor substrate, and a conductive part so formed as to include the inside of the through-hole. |
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DETAILED DESCRIPTION It is an object of the invention to provide a method of achieving an electrical connection between stacked semiconductor substrates with ease and high reliability as well as attaining miniaturization. An optical device according to the invention can include a first semiconductor substrate with an optical part and a first pad, a second semiconductor substrate with an integrated circuit and a second pad being stacked under the first semiconductor, a through-hole continuously extending through the first and the second semiconductor substrate, and a conductive part so formed as to include the inside of the through-hole. Accordingly, the first and the second semiconductor substrate are electrically connected through a conductive part in the through-hole which continuously extends through these semiconductor substrates. Hence, it is possible to keep the outer dimensions of the optical device within a range of the outer dimensions of a stacked structure of the first and the second semiconductor substrate, thus enabling miniaturization to be attained. In this optical device, the optical part may be formed on a side of a surface of the first semiconductor substrate opposite to the second semiconductor substrate. In this optical device, the integrated circuit may be on a side of a surface of the second semiconductor substrate opposite to the first semiconductor substrate. In this optical device, the through-hole may be so formed as to extend through at least one of the first and the second pad. By so doing, it makes it easier for the conductive part to be electrically connected to at least one of the first and the second pad. This optical device further comprises an insulating layer formed on the inside of the through-hole, and the conductive part may be formed on the insulating layer. By so doing, it is possible to prevent the electrical continuity between the conductive part and a semiconductor portion on the inside thereof. In this optical device, the conductive part may have an electrical connection on the side of the surface of the second semiconductor substrate opposite to the first semiconductor substrate
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