Low voltage micro-mirror array light beam switch |
| OF PREFERRED EMBODIMENTS OF THE INVENTION FIG. 1a discloses a sample array of 16 micro-mirrors 6 ... |
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Long-wavelength semiconductor light emitting device and its manufacturing method |
| It is therefore an object of the present invention to provide a long-wavelength semiconductor light ... |
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Method of producing a diaphragm on a substrate |
| We claim: 1. A method of producing on a substrate a diaphragm which is electrically isolated from ... |
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MEMS sensor structure and microfabrication process therefor |
| The present invention provides a micro-electro-mechanical sensor structure with an improved design ... |
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Electromechanical memory array using nanotube ribbons and method for making same |
| Preferred embodiments of the invention provide new electromechanical memory arrays and methods for ... |
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Silicon light emitting device and a method of making the device |
| OF THE INVENTION Referring to the Figures, a light emitting device 10 comprises a substrate 12 ... |
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Trench isolation method |
| Therefore, it is an object of the present invention to provide a trench isolation method which ... |
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Method for producing a radiation-emitting semiconductor chip |
| It is accordingly an object of the invention to provide a method for producing a radiation-emitting ... |
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Manufacture of MEMS structures in sealed cavity using dry-release MEMS device encapsulation |
| In general, the invention disclosed refers to gas phase release of any number of microstructure ... |
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Optical element in semiconductor laser device having a diffraction grating and improved resonance characteristics
| Details |
Inventors: Takiguchi, Haruhisa; Kaneiwa, Shinji; Matsui, Sadayoshi; Taneya, Mototaka;
Assignee: Sharp Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Davie; James W.
Assistant Examiner:
Attorney, Agent or Firm: Birch, Stewart, Kolasch and Birch
The disclosure is directed to an improved semiconductor laser device which includes a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device. |
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DETAILED DESCRIPTION Accordingly, an essential object of the present invention is to provide an improved semiconductor laser device in which Fabry-Perot resonance mode is suppressed, while disappearance of a diffraction grating in the manufacturing process is prevented, by employing a technical means in a waveguide structure of a semiconductor laser device having the diffraction grating of a distributed feedback type, distributed Bragg reflection type or the like, with a substantial elimination of disadvantages inherent in the conventional devices of the kind. Another important object of the present invention is to provide a semiconductor laser device of the above described type which is simple in structure and stable in function with high reliability, and can be readily manufactured on a large scale at low cost. In accomplishing these and other objects, according to one preferred embodiment of the present invention, there is provided a semiconductor laser device which comprises a first light deriving optical waveguide connected approximately perpendicularly to a light exit face at one side, a second light deriving optical waveguide connected approximately perpendicularly to another light exit face at the other side and having an optical axis different from that of the first light deriving optical waveguide, and a light emitting optical waveguide subjected to optical coupling with a periodical diffraction grating for optical resonance, and connected to end portions of the first and second light deriving optical waveguides within the semiconductor laser device. By the arrangement according to the present invention as described above, a highly efficient semiconductor laser device has been advantageously presented through a simple structure.
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