 Actuator |
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| Method for producing semiconductor device |
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| Asymmetric contacted metal-semiconductor-metal photodetectors |
| Having thus described the invention as above, We claim: 1. A photodetector comprising: a ... |
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| Voltage tunable schottky diode photoemissive infrared detector |
| OF THE PREFERRED EMBODIMENT The present invention is a Schottky diode infrared detector with a ... |
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| Semiconductor memory device with efficiently laid-out internal interconnection lines |
| An object of the present invention is to provide a semiconductor memory device having an internal ... |
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| Semiconductor device |
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| Lighting device |
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Optical semiconductor device and method of fabricating the same
| Details |
Inventors: Kobayashi, Fumihiko; Miyazawa, Take; Mori, Hidefumi; Nakano, Jun-ichi;
Assignee: Nippon Telegraph and Telephone Corporation (Tokyo, JP)
Primary Examiner: Zarabian; Amir
Assistant Examiner: Novacek; Christy
Attorney, Agent or Firm: Blakely Sokoloff Taylor & Zafman
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher. |
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DETAILED DESCRIPTION It is, therefore, a principal object of the present invention to provide an optical semiconductor device having a buried heterostructure with a flat surface and a method of fabricating the same.
To achieve the above object according to an aspect of the present invention, there is provided an optical semiconductor device comprising an optical semiconductor element formed on a semiconductor substrate, a semiconductor region opposing the optical semiconductor element and essentially surrounding the optical semiconductor element to form walls, and a buried layer arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy, wherein a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which a growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.
According to another aspect of the present invention, there is provided an optical semiconductor device comprising a plurality of optical semiconductor elements formed on a semiconductor substrate, a dummy portion formed in a center of a square at four corners of which the optical semiconductor elements are arranged, and a buried layer formed by vapor phase epitaxy so as to bury a portion between the optical semiconductor elements and the dummy portion.
According to still another aspect of the present invention, there is provided a method of fabricating an optical semiconductor device, comprising the first step of forming an optical semiconductor element on a semiconductor substrate, the second step of forming a semiconductor region having walls opposing the optical semiconductor element and essentially surrounding the optical semiconductor element, and the third step of forming a buried layer by vapor phase epitaxy between the walls of the semiconductor region and the optical semiconductor element, wherein in the second step, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which a growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher
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MEMS 
