Photovoltaic component and module

DETAILED DESCRIPTION OF THE INVENTION An advantage of the method according to the present invention is that no grooves have to be made in the passivating layer, and therefore the method according to the present invention is more simple and economical.
The layer thickness of the silicon wafer is limited to 160 μm or more.
This is explained by the fact that the photovoltaic component of the type in question is equipped with a mono-crystalline silicon wafer.
A layer thickness below 160 μm does not guarantee mechanical stability of the mono-crystalline silicon wafer.
In order to have a silicon wafer that has a smaller thickness, the silicon wafer is suitably a tri-crystalline silicon wafer, as described in German patent application publication No.
43 43 296 which is hereby incorporated by reference.
According to the method of the invention a so-called reverse side bonding of the silicon wafer or the photovoltaic component takes place.
In this way the shading of a photovoltaic component can be prevented with a silicon wafer and at the same time mechanical stability of the silicon wafer can be guaranteed at a layer thickness of below 160 μm.
The predetermined basic doping of the silicon wafer is either an n- or p-type basic doping, wherein the n-type doping is dominated by negative charges (electrons) and the p-type is dominated by positive charges (holes).
Accordingly either the n-type semiconductor part-structure or the p-type semiconductor part-structure forms with the silicon wafer the p-n junction.
This means that the silicon wafer together with one of the semiconductor part-structures forms the base of the photovoltaic component.
The emitter of the photovoltaic component is formed by the other semiconductor part-structure.
The absorption of a photon by the photoactive material of the silicon wafer causes a charge separation to take place.
The doping causes a certain minority charge carrier to be formed.
In the case of a p-type doping the minority charge carrier is an electron, in the case of an n-type doping the minority charge carrier is a "positively charged" electron hole