 Solid state imaging device, method of making the same and imaging unit including the same |
| According to one aspect of the invention, a solid state imaging device includes a package substrate;... |
|
| Arrays of stacked metal coordination compounds |
| This invention pertains to a novel process for preparing arrays of metal coordination compounds ... |
|
| Micro-machined electromechanical system (MEMS) accelerometer device having arcuately shaped flexures |
| The present invention overcomes limitations of the prior art for providing proof mass suspension in ... |
|
| Semiconductor device and method of fabricating same |
| It is an object of the present invention to provide a method of fabricating TFTs in which the ... |
|
| Trench isolation for micromechanical devices |
| In order to achieve the foregoing and to overcome the problems inherent in prior electrical ... |
|
| Method of making diode having reflective layer |
| OF THE INVENTION Reference will now be made in detail to the present invention, examples of which ... |
|
| Electrode structures |
| The method is based on the enhancement of material removal rates that are obtained when materials ... |
|
| Wafer bonding hermetic encapsulation |
| One object of the present invention is to provide a method for encapsulation which does not rely on ... |
|
| Etch control seal for dissolved wafer micromachining process |
| An embodiment of the present invention modifies a dissolved wafer micromachining process by ... |
|
| Dry etch process control using electrically biased stop junctions |
| Microelectromechanical systems (MEMS) are microdevices widely used as advanced sensors, ... |
|
|
Photovoltaic device, manufacturing method of photovoltaic device, photovoltaic device integrated with building material and power-generating apparatus
| Details |
Inventors: Shiozaki, Atsushi;
Assignee: Canon Kabushiki Kaisha (Tokyo, JP)
Primary Examiner: Robinson; Ellis
Assistant Examiner: Miggins; Michael C.
Attorney, Agent or Firm: Fitzpatrick, Cella, Harper & Scinto
The present invention provides a photovoltaic device being capable of generating a large amount of current even with thin joined semiconductor layers, has a high photoelectric conversion efficiency and can be manufactured inexpensively at a low temperature together with a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus. The photovoltaic device is formed by depositing joined semiconductor layers on a substrate, wherein a ratio of projected areas of regions on a surface of the joined semiconductor layers that have heights not smaller than a center value of concavities and convexities to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value of concavities and convexities on a surface of the substrate to a projected area of the entire surface of the substrate. |
|
DETAILED DESCRIPTION In view of the circumstances described above, an object of the present invention is to provide a photovoltaic device having excellent collective performance, that is, a photovoltaic device which is capable of generating a large amount of current with thin joined semiconductor layers, has a high photoelectric conversion efficiency, can be inexpensively manufactured at a low temperature and is capable of maintaining the conversion efficiency even after long-term use as well as a manufacturing method of the same, a photovoltaic device integrated with a building material and a power-generating apparatus.
The present invention provides a photovoltaic device comprising joined semiconductor layers on a substrate, wherein the substrate and the joined semiconductor layers have concavities and convexities on surfaces thereof and, when a mean value between a highest point and a lowest point on each of the surfaces is taken as an each center value and each surface is projected in a direction perpendicular to the substrate, a ratio of projected areas of regions on the surface of the joined semiconductor layers that have heights not smaller than the center value to a projected area of the entire surface of the joined semiconductor layers is higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value to a projected area of the entire surface of the substrate.
Furthermore, the present invention provides a manufacturing method of a photovoltaic element comprising depositing joined semiconductor layers on a substrate, wherein concavities and convexities are formed on surfaces of the substrate and the joined semiconductor layers, and when a mean value between a highest point and a lowest point on each of the surfaces is taken as an each center value and each surface is projected in a direction perpendicular to the substrate, a ratio of projected areas of regions on the surface of the joined semiconductor layers that have heights not smaller than the center value to a projected area of the entire surface of the joined semiconductor layers is made higher than a ratio of projected areas of regions on the surface of the substrate that have heights not smaller than the center value of the substrate to a projected area of the entire surface of the substrate
|
|
MEMS 
