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Pixel-cell-with-high-storage-capacitance-for-a-CMOS-imager

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Pixel cell with high storage capacitance for a CMOS imager

Details

Inventors: Rhodes, Howard E.;
Assignee: Micron Technology Inc. (Boise, ID)
Primary Examiner: Flynn; Nathan
Assistant Examiner: Forde ; Remmon R.
Attorney, Agent or Firm: Dickstein Shapiro Morin & Oshinsky LLP

A pixel sensor cell for use in a CMOS imager exhibiting improved storage capacitance. The source follower transistor is formed with a large gate that has an area from about 0.3 .mu.m.sup.2 to about 10 .mu.m.sup.2. The large size of the source follower gate enables the photocharge collector area to be kept small, thereby permitting use of the pixel cell in dense arrays, and maintaining low leakage levels. Methods for forming the source follower transistor and pixel cell are also disclosed.

DETAILED DESCRIPTION The present invention provides a source follower gate with improved storage capacitance formed in a semiconductor substrate.
The source follower gate has a large gate area to increase the storage capacitance of the pixel cell while not requiring an increase in the photosensor size, thereby avoiding leakage problems and improving quantum efficiency.
A method for forming the large source follower gate of the present invention is also provided.
Additional advantages and features of the present invention will be apparent from the following detailed description and drawings which illustrate preferred embodiments of the invention.

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