|
|
Solid-state imaging device
It is an object of the present invention to provide a highly sensitive solid-state imaging device and a method for manufacturing such a highly sensitive solid-state ...
|
|
|
Process for making light waveguide element
Accordingly, it is an object of the invention to provide a process for making a light waveguide element enabling precise optical axis alignment. According to the ...
|
|
|
Focal plane arrays in type II-superlattices
OF THE DRAWINGS The active layers of photovoltaic and photoconductive type-II detectors of the subject invention are made from superlattices with a type-II band ...
|
|
|
Method for determining a preceding wafer, method for determining a measuring wafer, and method for adjusting the number of wafers
The first object of the present invention is determining a preceding wafer so that by using the preceding wafer the processing results of a process are within ...
|
|
|
Thin film actuated mirror array in an optical projection system
Accordingly, considering the conventional problems as described above, it is an object of the present invention to provide a thin film actuated mirror array in an ...
|
|
|
Mechanical grating device
It is an object of the present invention to provide a mechanical grating device which has equal actuation conditions for the deformable elements in order to improve the ...
|
|
|
Reduced formation of asperities in contact micro-structures
A device, in accordance with the embodiments of the invention, comprises one or more micro-structures suspended over a substrate. The micro-structures can be, but are ...
|
|
|
Low Cu percentages for reducing shorts in AlCu lines
One object of the present invention is to provide an AlCu metallization scheme for blanket metal deposition layers subjected to reactive ion etching that lessens or ...
|
|
|
Avalanche photo diode with quantum well layer
It is an object of the present invention to provide an avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two ...
|
|
|
Avalanche photodiode having a multiplication layer with superlattice
It is the object of the present invention to provide an avalanche photodiode in which an InAlAs/InGaAs superlattice structure is used as a multiplication layer in order ...
|