 Method of coating a substrate in carbon dioxide with a carbon-dioxide insoluble material |
| OF THE INVENTION The invention will now be further described by the preferred embodiments ... |
|
| Method for fabricating locally reinforced metallic microfeature |
| The exemplary methods described herein are differentiated from one another by the type and number ... |
|
| Topcoat process to prevent image collapse |
| OF A PREFERRED EMBODIMENT Reference is made to the figure to illustrate selected embodiments and ... |
|
| High pressure and high temperature reaction system |
| Embodiments of an apparatus and methods for mitigation of corrosion in a high pressure and high ... |
|
| Method for manufacture of ultra-thin film capacitor |
| Broadly, according to the present invention, a suitable substrate is provided to which is applied a ... |
|
| Photovoltaic-storage battery device |
| The invention contemplates elimination of the above problems, and its object is to provide a novel ... |
|
| Hollow cathode |
| Having thus described our invention, what we claim as new and desire to secure by Letters Patent is:... |
|
| Integrable solid state battery and process for producing same |
| I claim: 1. A process for producing a solid state battery successively comprising, superimposed ... |
|
| Thin film ion conducting coating |
| A transparent thin film ion-conductive and electronically resistive layer is formed by deposition ... |
|
|
Pressure detecting device
| Details |
Inventors: Toyoda, Inao; Oda, Teruo; Otake, Seiichirou; Tanaka, Hiroaki;
Assignee: Denso Corporation (Kariya, JP)
Primary Examiner: Wilson; Allan R.
Assistant Examiner:
Attorney, Agent or Firm: Posz Law Group, PLC
A pressure detecting device includes a semiconductor substrate (30, 200, 300, 400) for outputting an electrical signal corresponding to an applied pressure received from a pressure transmitting member (20) having electrically conductive properties disposed on the front surface of the semiconductor substrate (30, 200, 300, 400). The substrate (30, 200, 300, 400) and the pressure transmitting member (20) are accommodated in a housing (10). A lead member (50) electrically independent of the housing (10) is accommodated in the housing (10) at the back surface side of the semiconductor substrate (30, 200, 300, 400), and the lead member (50) and an electrode (35b) of the substrate (30, 200, 300, 400) are electrically connected to each other through conductive adhesive material (40). The housing (10) preferably includes a first portion (101), a second portion (102) having smaller thermal conductivity than the first portion, and an electrically conductive partition portion (103). |
|
DETAILED DESCRIPTION Therefore, the present invention has been implemented in view of the foregoing problems, and has a first object to provide a pressure detecting device having a proper construction to enable reduction of the size (diameter) of a housing.
A second object is to provide a pressure detecting device that can suppress increase in temperature of the semiconductor substrate while reducing the diameter (size) of the housing.
The pressure detecting device includes a semiconductor substrate for outputting an electrical signal in accordance with pressure applied in a direction in which both the front and back surfaces of the semiconductor substrate are spaced from each other, a pressure transmitting member having electrically conductive properties and that is equipped at the front surface side of the semiconductor substrate to transmit pressure to the front surface side of the semiconductor substrate, and a housing in which the semiconductor substrate and the pressure transmitting member are accommodated.
The semiconductor substrate has a first electrode on the front surface thereof and a second electrode on the back surface thereof so that an electrical signal may be output through the first electrode and the second electrode when the pressure is applied.
The first electrode is electrically connected to the pressure transmitting member.
A lead member electrically independent of the housing is accommodated in the housing at the back surface side of the semiconductor substrate.
The lead member and the second electrode of the semiconductor substrate are electrically connected to each other.
According to the first aspect of this invention the semiconductor device is designed so that the electrodes are equipped on the front and back surfaces thereof and both the front and back surfaces are sandwiched by the conductive pressure transmitting member and the lead member, so that no wire boding is required for lead-out of the electrode on each of the front and back surfaces of the semiconductor substrate
|
|
MEMS 
