Process for coating with single source precursors

DETAILED DESCRIPTION It is therefore an object of the invention to provide a chemical vapor deposition method for depositing thin coatings of metal chalcogenides in which the use of reasonable pressures greatly simplifies the equipment and instrumentation required to prepare the coatings.
A further object of the invention is to provide a process that produces coatings at high deposition rates.
Additionally, it is an object of the invention to employ a less toxic and less volatile source of chalcogens than are manifest in prior art approaches.
Further, it is an object of the invention to produce stoichiometric coatings of highly dense metal chalcogenides, thereby maximizing electrical, optical and diffusion properties.
A still further object of the invention is to produce stoichiometric coatings of metal dichalcogenides without resort to the use of separate reactant streams.
In satisfying the above-mentioned objects of the invention, a single source metal chalcogenide precursor is provided which can be sublimed under vacuum and which forms a metal dichalcogenide coating onto a substrate located in a chemical vapor deposition reactor.