Process for making photovoltaic devices and resultant product

DETAILED DESCRIPTION What is claimed is: 1.
A process for making a photovoltaic device, comprising: establishing a contained environment heated in a steady state during the processing; introducing vapors of cadmium and tellurium into the contained environment; and conveying a heated sheet substrate including a planar glass sheet within the contained environment for continuous elevated temperature deposition of a layer of cadmium telluride onto one surface of the substrate to function as a semiconductor for absorbing solar energy, the substrate being oriented within the contained environment for the deposition of the cadmium telluride on the one surface thereof and with the other surface of the substrate being supported within the periphery thereof for conveyance while maintaining the planarity of the glass sheet.
2.
A process for making a photovoltaic device as in claim 1 wherein the substrate is supported and conveyed within the contained environment by rolls of a roller conveyor during the deposition of the layer of cadmium telluride onto the one surface of the substrate.
3.
A process for making a photovoltaic device as in claim 1 wherein another semiconductor material is deposited onto the one surface of the substrate as a separate layer having an interface with the layer of cadmium telluride.
4.
A process for making a photovoltaic device as in claim 1 wherein another semiconductor material is deposited as another layer onto the one surface of the substrate before the layer of cadmium telluride which is deposited thereover and has an interface with the layer of cadmium telluride.
5.
A process for making a photovoltaic device as in claim 4 wherein the layer of semiconductor material deposited onto the one surface of the substrate before the layer of cadmium telluride is cadmium sulfide.
6.
A process for making a photovoltaic device as in claim 1 wherein another semiconductor material is deposited as another layer onto the one surface of the substrate after the layer of cadmium telluride and has an interface with the layer of cadmium telluride