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Process for producing nitride semiconductor light-emitting device
| Details |
Inventors: Cho, Dong Hyun; Koike, Masayoshi; Hahm, Hun Joo;
Assignee: Samsung Electro-Mechanics Co., Ltd. (Kyungki-do, KR)
Primary Examiner: Dang; Trung
Assistant Examiner:
Attorney, Agent or Firm: Lowe Hauptman & Berner, LLP
A process for producing a nitride semiconductor light-emitting device includes the steps of preparing a substrate, growing a p-type nitride semiconductor layer on the substrate by the MOCVD process using hydrazine-based gas as a nitrogen precursor and N.sub.2 gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively. |
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DETAILED DESCRIPTION Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide a process for producing a nitride semiconductor light-emitting device having an n-type nitride semiconductor layer arranged on a light-emitting side (generally, the side opposite the substrate) of an active layer by forming a p-type nitride semiconductor layer in such a manner that a heat treatment process to activate p-type impurities may be eliminated.
In accordance with the present invention, the above and other objects can be accomplished by the provision of a process for producing a nitride semiconductor light-emitting device comprising the steps of: preparing a substrate, growing a p-type nitride semiconductor layer by the MOCVD process using hydrazine-based gas as a nitrogen precursor material and N.
sub.
2 gas as a carrier gas, forming an active layer on the p-type nitride semiconductor layer, forming an n-type conductive nitride semiconductor layer on the active layer, and forming p- and n-electrodes in electrical connection with the p- and n-type nitride semiconductors, respectively.
Preferably, the p-type impurities used in the p-type nitride semiconductor layer may be Mg.
Preferably, the present process may further comprise forming a buffer layer on the substrate, prior to forming the p-type nitride semiconductor layer.
This buffer layer may be a low temperature nucleus-growth layer made of material having the formula of Al.
sub.
xIn.
sub.
yGa.
sub.
1-(x+y)N (0.
ltoreq.
x, y.
ltoreq.
1).
The step of forming the p-type nitride semiconductor layer may comprise the steps of forming a first layer made of a p-type Al.
sub.
xIn.
sub.
yGa.
sub.
1-(x+y)N (0.
ltoreq.
x, y.
ltoreq.
1) material on the substrate, and forming on the first layer a second layer made of Al.
sub.
xIn.
sub.
yGa.
sub.
1-(x+y)N (0.
ltoreq.
x, y.
ltoreq.
1) material having an energy band gap greater than that of the first layer.
In addition, in association with this step or separately, the step of forming the n-type nitride semiconductor layer may include the steps of forming the first layer made of an n-type Al
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MEMS 
