 Method for producing semiconductor device |
| An object of the present invention is to provide a method capable of solving the above problems, ... |
|
| Asymmetric contacted metal-semiconductor-metal photodetectors |
| Having thus described the invention as above, We claim: 1. A photodetector comprising: a ... |
|
| Voltage tunable schottky diode photoemissive infrared detector |
| OF THE PREFERRED EMBODIMENT The present invention is a Schottky diode infrared detector with a ... |
|
| Semiconductor memory device with efficiently laid-out internal interconnection lines |
| An object of the present invention is to provide a semiconductor memory device having an internal ... |
|
| Semiconductor device |
| What is claimed is: 1. A semiconductor device utilizing independent and bead-like spherical ... |
|
| Lighting device |
| Therefore, with the foregoing in mind, it is an object of the present invention to provide a ... |
|
| Method for fabricating semiconductor thin film |
| However, a method for crystallizing an amorphous silicon film by heat treatment in the prior art ... |
|
|
Process for vapor phase epitaxy of compound semiconductor
| Details |
Inventors: Okahisa, Takuji; Shimazu, Mitsuru; Matsushima, Masato; Miura, Yoshiki; Motoki, Kensaku; Seki, Hisashi; Koukitu, Akinori;
Assignee: Sumitomo Electric Industries, Ltd. (Osaka, JP)
Primary Examiner: Dutton; Brian
Assistant Examiner:
Attorney, Agent or Firm: Smith, Gambrell & Russell Beveridge, DeGrandi, Weilacher & Young
A process for forming a high quality epitaxial compound semiconductor layer of indium gallium nitride In.sub.x Ga.sub.1-x N, (where 0<x<1) on a substrate. A first gas including indium trichloride (InCl.sub.3) and a second gas including ammonia (NH.sub.3) are introduced into a reaction chamber and heated at a first temperature. Indium nitride (InN) is grown epitaxially on the substrate by nitrogen (N.sub.2) carrier gas to form an InN buffer layer. Thereafter, a third gas including hydrogen chloride (H1) and gallium (Ga) is introduced with the first and second gases into a chamber heated at a second temperature higher than the first temperature and an epitaxial In.sub.x Ga.sub.1-x N layer is grown on the buffer layer by N.sub.2 gas. By using helium, instead of N.sub.2, as carrier gas, the In.sub.x Ga.sub.1-x N layer with more homogeneous quality is obtained. In addition, the InN buffer layer is allowed to be modified into a GaN buffer layer. |
|
DETAILED DESCRIPTION Accordingly, an object of the present invention is mainly to resolve the above mentioned problems and to provide a process for vapor phase epitaxy of a compound semiconductor which process can make an epitaxial layer of indium gallium nitride (In.
sub.
x Ga.
sub.
1-x N, where, 0<x<1) with high quality and excellent homogeneity, by improving mixture of raw material gasses.
Another object of the present invention is especially to provide a process for vapor phase epitaxy of a compound semiconductor which process can make an epitaxial layer with high quality of indium gallium nitride (In.
sub.
x Ga.
sub.
1-x N, where, 0<x<1) with high quality, by providing a new raw material.
Another object of the present invention is particularly to provide a process for vapor phase epitaxy of a compound semiconductor which process can make an epitaxial layer of indium gallium nitride (In.
sub.
x Ga.
sub.
1-x N, where, 0<x<1) with higher quality, by using a carrier gas selected on the basis of a new view.
According to a first elementary feature of the present invention, there is provided a process for vapor phase epitaxy of a compound semiconductor indium gallium nitride In.
sub.
x Ga.
sub.
1-x N (where, 0<x<1) wherein indium trichloride (InCl.
sub.
3) is used as an indium (In) source.
In the process of the present invention, it is preferable that the above compound semiconductor In.
sub.
x Ga.
sub.
1-x N (where, 0<x<1) is grown by vapor phase epitaxy on a conductive substrate which is made of least one material selected in a group of gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), indium phosphide (InP) and silicon carbide (SiC).
Preferably, in the process of the present invention, inactive gas, such as nitrogen (N.
sub.
2) gas, helium (He) gas, etc.
, is used as carrier gas for growing said compound semiconductor In.
sub.
x Ga.
sub.
1-x N (where, 0<x<1) by vapor phase epitaxy.
According to a specified feature of the present invention, there is provided a process for vapor phase epitaxy of a compound semiconductor indium gallium nitride In
|
|
MEMS 
