Rapid process for producing a chalcopyrite semiconductor on a substrate

DETAILED DESCRIPTION This object is achieved, according to the invention, by a process for producing a chalcopyrite semiconductor of the type ABC.
sub.
2, where A is copper, B is indium or gallium, and C is sulfur or selenium, on a substrate.
A layer structure is produced on the substrate by applying the components A, B, and C in elemental form and/or as a binary interelemental compound B.
sub.
2 C.
sub.
3, the component C being present in an excess which forms up to twice the stoichiometrically exact proportion of component C.
The substrate with the layer structure is rapidly heated to a processing temperature, which is greater than or equal to 350.
degree.
C.
, at a heating rate of at least 10.
degree.
C.
/s, and the substrate is kept at the processing temperature for a time interval dt of 10 seconds to 1 hour.
An encapsulation is provided on the basis of a covering above the layer structure at a spacing of less than 5 mm, which encapsulation maintains, throughout the entire annealing process, a partial pressure for the component C which is above the partial pressure of C which would develop above a stoichiometrically exact ABC.
sub.
2 semiconductor.
Further developments of the invention are as follows.
The substrate with the layer structure is kept in a closed container for the purpose of encapsulation.
A graphite container is used and the heating is carried out with a heating lamp.
The component A is applied in elemental form as a first layer of the layer structure.
The chosen heating rate is high enough for the processing temperature to be reached in less than 10 seconds.
After reaching the desired processing temperature T.
sub.
p, annealing is performed at T.
sub.
p for a length of time inversely related to T.
sub.
p.
The annealing is carried out at a total gas pressure of between 1 hpa and 1000 hpa.
The components A, B, and C are deposited in a molar ratio of 1:m:2n for the layer structure, where m is in the range of 0.
9 to 1.
3 and n is in the range of 1.
0 to 1.
8.
The components A and B are applied to the substrate in an amount of at least approximately 2