Resistive cross point array of short-tolerant memory cells

DETAILED DESCRIPTION According to one aspect of the present invention, a data storage device includes a resistive cross point array of memory cells.
Each memory cell includes a memory element and an electrically conductive hard mask material on the memory element.
The hard mask material functions as a resistive element in series with the memory element.
If a memory element becomes shorted, the shorted memory element will cause only a randomized bit error.
However, the hard mask prevents the shorted memory element from causing column-wide and row-wide errors.
Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the present invention.