Self-aligned MRAM contact and method of fabrication

DETAILED DESCRIPTION The present invention provides a method for forming self-aligned MRAM contacts for MRAM structures, such as magnetic layers of an MRAM stack, formed over various underlayers of an integrated circuit substrate.
In an exemplary embodiment of the invention, MRAM stacks are formed to include a top layer of a conductive material, such as tungsten nitrogen.
An insulating material is formed over the whole substrate including the MRAM stacks.
The insulating material is subsequently chemically mechanically polished (CMP) to expose the upper surface of such conductive material and to form a self-aligned MRAM contact on a respective MRAM stack.
Subsequent word lines and conductive plugs are formed over the self-aligned MRAM contacts.
These and other features and advantages of the invention will be more apparent from the following detailed description which is provided in connection with the accompanying drawings, which illustrate exemplary embodiments of the invention.