Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme

DETAILED DESCRIPTION This invention pertains to a method of fabricating an MRAM structure and the resulting structure.
The MRAM structure of the invention has the pinned layer recessed within a trench with an upper unpinned magnetic layer positioned over it.
The method of fabrication utilizes a spacer placed within an etched insulator opening to reduce the opening size.
The upper magnetic layer of the MRAM stack structure is formed within the smaller size region defined by spacers, thereby allowing for accurate placement and self-alignment of the upper magnetic layer over the underlying pinned magnetic layer.
This process is repeatable to form multiple MRAM device layers for heightened levels of vertical integration.
These and other feature and advantages of the invention will be more clearly understood from the following detailed description, which is provided with reference to the accompanying drawings.