 Method of fabricating a microelectronic device package with an integral window |
| OF THE INVENTION The present invention relates to a method of fabricating a package having an ... |
|
| Circuitry for image sensors with avalanche photodiodes |
| An first object of the present invention is a in-pixel circuit architecture for APDs operating in ... |
|
| Process for fabricating stiction control bumps on optical membrane via conformal coating of etch holes |
| One chronic problem associated with micro electromechanical system (MEMS) membranes in general is ... |
|
| Apparatus and method for forming a battery in an integrated circuit |
| The present invention provides an electrochemical structure within an integrated circuit, ... |
|
| Single-poly 2-transistor based fuse element |
| The present invention achieves technical advantages as an electrically programmable transistor fuse ... |
|
| Image sensor using a thin film photodiode above active CMOS circuitry |
| An image sensor comprising a first conductive layer, which is part of a circuitry of an integrated ... |
|
| Method for fabricating a semiconductor device |
| A means for solving the problems described above will now be explained with reference to FIG. 1. A ... |
|
| Manufacture method of pixel structure |
| The invention provides a manufacture method of pixel structure to improve the conventional method ... |
|
| Zero-crossing triac and method |
| OF THE DRAWINGS FIG. 1 schematically illustrates a portion of a circuit suitable for implementing ... |
|
| Process for producing nitride semiconductor light-emitting device |
| Therefore, the present invention has been made in view of the above problems, and it is an object ... |
|
|
Semiconductor circuit and method of fabricating the same
| Details |
Inventors: Kato, Kiyoshi; Atsumi, Tomoaki; Isobe, Atsuo;
Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP)
Primary Examiner: Graybill; David E.
Assistant Examiner:
Attorney, Agent or Firm: Robinson; Eric J. Robinson Intellectual Property Law Office, P.C.
According to the invention, a plurality of semiconductor devices which are required to have conformance are formed from crystalline semiconductor films having uniform crystallinity on the same line, and a semiconductor circuit in which variation between semiconductor devices is small can be provided, and a semiconductor integrated circuit having high conformance can be provided. The invention is characterized in that, in a part or whole of thin film transistors which configure an analog circuit such as a current mirror circuit, a differential amplifier circuit, or an operational amplifier, in which high conformance is required for semiconductor devices included therein, channel forming regions have crystalline semiconductor films on the same line. High conformance can be expected for an analog circuit which has the crystalline semiconductor films on the same line formed using the invention as the channel forming regions of the thin film transistors. That is, the invention is characterized in that, among the thin film transistors which configures the analog circuit, the channel forming regions of the thin film transistors having at least the same polarity are formed on the same line. |
|
DETAILED DESCRIPTION In view of the above-mentioned problems, an object of the present invention is to provide a forming method for a channel forming region from a crystalline semiconductor film with uniform crystallinity.
Another object of the present invention is to form a plurality of semiconductor devices which require high conformity from crystalline semiconductor films with uniform crystallinity, further to provide a semiconductor circuit in which variation between semiconductor devices is small and a semiconductor integrated circuit with high performance.
Still another object of the present invention is to provide a semiconductor circuit in which variation between a plurality of analog circuits is small (for example, analog switch circuits).
Further, especially, by designating a region where a channel forming region is formed to form a crystalline semiconductor region with no grain boundary existing therein, yet still further another object of the present invention is to provide a semiconductor integrated circuit which is constituted by a semiconductor device or a group of semiconductor devices which are capable of high speed operations and has high current driving capability.
In order to solve the problems, the invention is characterized in that, on a substrate having an insulating surface, formed is an insulating film with depressions and projections which are formed as linear stripe-shaped patterns, and an amorphous semiconductor film is formed on the insulating film, and the semiconductor film is melted and recrystallized at a portion which corresponds to the depression of the insulating film (hereinafter, simply referred to as the depression) so that a crystalline semiconductor film of stripe shape is obtained.
It is characterized in that patterning is applied to the stripe-shaped crystalline semiconductor film on the same line to form an island-shaped semiconductor film including a channel forming region including the stripe-shaped crystalline semiconductor film.
And, the invention is characterized in that, in a part or whole of the thin film transistors configuring a current mirror circuit, a differential amplifier circuit, or an operational amplifier circuit wherein high conformance is required in its semiconductor devices, the channel forming region has the crystalline semiconductor film on the same line
|
|
MEMS 
