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Semiconductor-device

Semiconductor device and a method of manufacturing the same

The invention claimed is: 1. A method of manufacturing a semiconductor device including a field ...

Solid state image sensor unit with wide dynamic range and high resolution

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Method of making toroidal MRAM cells

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Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects

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Making a semiconductor photodetector

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Solid state image sensor and method for fabricating the same

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Semiconductor device

Details

Inventors: Tashiro, Tsutomu;
Assignee: NEC Corporation (Tokyo, JP)
Primary Examiner: Hille; Rolf
Assistant Examiner: Potter; Roy
Attorney, Agent or Firm: Burns, Doane, Swecker & Mathis

The substrate in a SOI structure is formed of a material with high heat conductivity, a U groove reaches substrate, the buried material inside the U groove is formed of a material with high heat conductivity, and the buried material is brought into contact with the substrate. With this arrangement, the drop in heat radiation effect can be improved while maintaining the enhancement of the resistance to the soft errors and the reduction of the parasitic capacitance on the bottom surface of the semiconductor element, so that the heat radiation effect can be made to approach the heat radiation effect of a semiconductor device having an insulated isolation region of the conventional U-groove structure. Further, in this case the speed and power product can be made better than the speed and power product of a semiconductor device having an insulated isolation region of the conventional U-groove structure.

DETAILED DESCRIPTION Objects of the Invention It is an object of the present invention to provide a semiconductor device having an SOI structure and an insulated isolation region of a U-groove structure.
It is an object of the present invention to provide a semiconductor device with high resistance to the soft errors.
It is an object of the present invention to provide a semiconductor device with excellent operating speed.
It is an object of the present invention to provide a semiconductor device with excellent operating speed and small parasitic capacitance.
It is an object of the present invention to provide a semiconductor device with excellent heat radiation effect.
It is an object of the present invention to provide a bipolar semiconductor device having an SOI structure and an insulated isolation region of a U-groove structure.
It is an object of the present invention to provide a bipolar semiconductor device with high resistance to the soft errors.
It is an object of the present invention to provide a bipolar semiconductor device with excellent operating speed.
It is an object of the present invention to provide a bipolar semiconductor device with excellent operating speed and small parasitic capacitance.
It is an object of the present invention to provide a bipolar semiconductor device with excellent heat radiation effect.
It is an object of the present invention to provide an MOS semiconductor device having an SOI structure and an insulated isolation region of a U-groove structure.
It is an object of the present invention to provide an MOS semiconductor device with high resistance to the soft errors.
It is an object of the present invention to provide an MOS semiconductor device with excellent operating speed.
It is an object of the present invention to provide an MOS semiconductor device with excellent operating speed and small parasitic capacitance.
It is an object of the present invention to provide an MOS semiconductor device with excellent heat radiation effect.
SUMMARY OF THE INVENTION The semiconductor device according to the present invention has a single crystal silicon layer on a substrate having a silicon oxide film on the surface, and has an insulated isolation region of a U-groove structure that reaches the substrate from the surface of the single crystal silicon layer

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