Semiconductor device and a method of manufacturing the same

DETAILED DESCRIPTION The invention claimed is: 1.
A method of manufacturing a semiconductor device including a field effect transistor comprising the steps of: forming a gate electrode by way of a gate insulating film above a main surface of a semiconductor substrate; ion implanting first impurities from the main surface of the semiconductor substrate to inside thereof to form a first semiconductor region that is aligned with the gate electrode; after the step of forming the gate electrode, ion implanting a group IV element to a level shallower than the implantation depth of the impurities in the step of forming the first semiconductor region from the main surface of the semiconductor substrate to inside thereof, forming a side wall spacer to the side wall of the gate electrode after forming the first semiconductor region; ion implanting second impurities to the main surface of the semiconductor substrate to form a second semiconductor region so as to be aligned with the side wall spacer, wherein the ion implantation for the group IV element is conducted to a level shallower than an implantation depth of the second impurities in the step of forming the second semiconductor region, and forming a refractory metal film on the second semiconductor region, then applying a heat treatment for reacting silicon of the second semiconductor region and the metal of the refractory metal film to form a metal semiconductor reaction layer on the second semiconductor region.
2.
A method of manufacturing a semiconductor device according claim 1, wherein the step of ion implanting the group IV element is a step of forming an amorphous layer at a depth from the main surface of the semiconductor substrate which is shallower than the first semiconductor region.
3.
A method of manufacturing a semiconductor device according claim 1, further comprising a step of: activating, by a heat treatment, first impurities ion implanted in the step of forming the first semiconductor region after the step of implanting the group IV element and after the step of forming the first semiconductor region