Semiconductor device and a method of manufacturing the same

DETAILED DESCRIPTION The present invention is made to solve such disadvantages as described above and contemplates a semiconductor device improved to be capable of stably forming a contact hole.
The present invention also contemplates a semiconductor device improved to be capable of microfabrication.
A semiconductor device in one aspect includes a semiconductor substrate.
An element isolating region for isolating an active region from another active region is provided on the semiconductor substrate.
The active region is provided with an impurity diffusion layer.
A gate electrode is provided on the element isolating region.
A stopper film is provided on the gate electrode.
An interlayer insulating film is provided on the semiconductor substrate to cover the gate electrode.
A first contact hole exposing a surface of the gate electrode penetrates the interlayer insulating film and the stopper film.
A second contact hole for exposing a surface of the impurity diffusion layer is provided in the interlayer insulating film.
The stopper film is formed of a material which is higher in etch selectivity than the interlayer insulating film.
A semiconductor device in a second aspect includes a semiconductor substrate.
An element isolating region for isolating an active region from another active region is provided on the semiconductor substrate.
The active region is provided with an impurity diffusion layer.
A gate electrode is provided on the element isolating region.
A stopper film is provided on the semiconductor substrate to cover the gate electrode and the impurity diffusion layer.
An interlayer insulating film is provided on the semiconductor substrate with the stopper film interposed therebetween.
A first contact hole which exposes a surface of the impurity diffusion layer penetrates the interlayer insulating film and the stopper film.
The stopper film is formed of a material which is higher in etch selectivity than the interlayer insulating film.
In a semiconductor device in a third aspect, a second contact hole which exposes a surface of the gate electrode penetrates the interlayer insulating film and the stopper film