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Semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors--all formed in a single semiconductor substrate
| Details |
Inventors: Taguchi, Minoru;
Assignee: Kabushiki Kaisha Toshiba (Kawasaki, JP)
Primary Examiner: Hille; Rolf
Assistant Examiner: Fahmy; Wael
Attorney, Agent or Firm: Finnegan, Henderson, Farabow, Garrett and Dunner
A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor subtrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device,and thus blocks noise generated in the first well. Hence, the other islands are free from the influence of the noise. |
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DETAILED DESCRIPTION Accordingly it is the object of this invention to provide semiconductor device which comprises a charge transfer device, bipolar transistors, and and MOSFETs, all formed in a single semiconductor substrate, and which operates with sufficient reliability.
To achieve the object, according to the invention, there is provided a semiconductor device comprising: a semiconductor substrate of a first conductivity type, having a major surface; an epitaxial layer of a second conductivity type, formed on the major surface of the semiconductor substrate; an isolation layer of the first conductivity type formed in the epitaxial layer, extending from a surface thereof to the the substrate and dividing the epitaxial layer into first, second, and third islands; a first well of the first conductivity type, formed in the first island and extending to the epitaxial layer; a second well of the first conductivity type, formed in the second island and extending to the epitaxial layer; a charge transfer device having a back gate formed of the first well; an insulated-gate FET of the first conductivity type, having a back gate formed of the second island; an insulated-gate FET of the second conductivity type, having a back gate formed of the second well; and a bipolar transistor having a collector formed of the third island.
The first island surrounds the first well which serves as a back gate of the charge transfer device.
Hence, the first island blocks the noise generated in the first well, and the noise does not influence other islands.
The device is therefore reliable despite the charge transfer device and the bipolar transistor being formed on the same chip.
Further, since the collector of the bipolar transistor is formed of the second island which, in turn, is made of epitaxial layer, the breakdown voltage of the bipolar transistor can be varied, merely by changing the thickness of the epitaxial layer.
In addition, since the first and second islands are electrically isolated, the collector bias of the bipolar transistor can be made to differ from the back-gate bias of the insulated-gate FET which back gate is formed of the first island
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MEMS 
