Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone

DETAILED DESCRIPTION It is the object of the invention to provide a semiconductor element having a p-zone on the anode side and an adjacent weakly doped n-zone which combines improved recovery behavior upon commutation with good forward conduction characteristics and a low reverse current and can be easily manufactured industrially for a broad range of currents and voltages.
In accordance with the present invention, the above objects are achieved by providing a semiconductor component having a weakly doped continuous interior p-zone which is provided on its surface with an ohmic contact layer and which is adjacent to a weakly doped n-base zone adjacent to which is arranged a highly doped n.
sup.
+ -zone, and wherein highly doped p+-surface zones are arranged entirely within partial regions of the weakly doped p-zone.
Further features of the invention are set forth in the claims.
The advantages realized by the invention are that, in the semiconductor element, the reverse current peak is greatly reduced and the drop in reverse current after the maximum is a flat curve.
The reverse current is reduced so that the semiconductor element ca be used for higher operating temperatures.
Moreover, the semiconductor element can be manufactured in large quantities and with large surfaces without costly irradiation procedures and without the masking accuracy required for field effect components.
The invention will be described in greater detail below with reference to embodiments which are illustrated schematically in the drawing figures.