Semiconductor integrated circuit and method of making the same

DETAILED DESCRIPTION It is an object of the present invention to provide a semiconductor integrated circuit device in which CCD type, bipolar type, and MOS type integrated circuits are provided in one semiconductor chip to eliminate described disadvantages of the multi-chip techniques.
It is another object of the present invention to provide a semiconductor integrated circuit device having an isolation structure suitable for forming CCD type, bipolar type, and MOS type integrated circuits in one semiconductor chip.
It is still another object of the present invention to provide a method of making the above semiconductor integrated circuit device without using a complicated process.
According to an aspect of the present invention, there is provided a semiconductor integrated circuit device which comprises island-shaped epitaxial layers of opposite conductivity type selectively provided in a major surface of a semiconductor substrate of one conductivity type having a low impurity concentration, a field insulating layer surrounding a periphery of an exposed surface of each of the epitaxial layers, and a buried layer of opposite conductivity type having a high impurity concentration, terminating to the field insulating layer and covering each epitaxial layer.
The CCD type, bipolar type, and MOS type integrated circuits are arranged on a part of the major surface of the semiconductor substrate, each epitaxial layer, and another part of the major surface of the semiconductor substrate and/or another epitaxial layer, respectively.
According to another aspect of the present invention, there is provided a method of making the semiconductor integrated circuit device according to a principle incorporated in the firstly referred aspect of the present invention.