Semiconductor laser device and method of fabricating the same

DETAILED DESCRIPTION Accordingly in view of the above circumstance the present invention contemplates a semiconductor laser device allowing a laser portion to have a satisfactory laser characteristic to provide increased production yield and a method of fabricating the same.
The present invention is a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, wherein the plurality of laser portions contain different types, respectively, of dopant.
The present semiconductor laser device allows p type dopant to vary in type for different laser portions.
In that case preferably one laser portion contains p type dopant of zinc (Zn), carbon (C) or magnesium (Mg) and another laser portion contains p type dopant of beryllium (Be).
Furthermore in the present semiconductor laser device preferably one laser portion is formed mainly of an AlGaAs based crystal and another laser portion is formed mainly of an AlGaInP based crystal.
Furthermore the present invention is a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, wherein a laser portion previously formed and a laser portion subsequently formed are formed by different crystal growth methods, respectively.
In the present method one of the crystal growth methods employed to form the laser portions can be metal-organic chemical vapor deposition (MOCVD).
Furthermore in the present method one of the crystal growth methods employed to form the laser portions can be molecular beam epitaxy (MBE).
In that case for the laser portion previously formed a crystal can be grown by MBE.
Furthermore in that case preferably the laser portion previously formed contains p type dopant having a diffusion coefficient smaller than that of p type dopant in the laser portion subsequently formed.
Furthermore in that case preferably the laser portion previously formed contains p type dopant of beryllium