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Semiconductor light-emitting device and method for manufacturing thereof
| Details |
Inventors: Sasaki, Kazuaki; Nakamura, Junichi; Ohyama, Shouichi;
Assignee: Sharp Kabushiki Kaisha (Osaka, JP)
Primary Examiner: Pham; Long
Assistant Examiner: Louie; Wai-Sing
Attorney, Agent or Firm: Nixon & Vanderhye, P.C.
In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is formed under the n-GaAs substrate, and a second electrode is formed on the grown-layer side. In this process, a region of the p-intermediate band gap layer just under the second electrode is removed, the p-current diffusion layer is stacked in the removal region on the p-cladding layer, and a junction plane of the p-current diffusion layer and the p-cladding layer becomes high in resistance due to an energy band structure of type II. This semiconductor light-emitting device is capable of reducing ineffective currents with a simple construction and taking out light effectively to outside, thus enhancing the emission intensity. |
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DETAILED DESCRIPTION Accordingly, an object of the present invention is to provide a semiconductor light-emitting device, as well as a method for manufacture thereof, which can be reduced in ineffective current with a simple construction and can effectively take out light to outside.
In order to achieve the above object, there is provided a semiconductor light-emitting device comprising: a first-conductive-type first cladding layer, a first-conductive-type or second-conductive-type or an undoped active layer, a second-conductive-type second cladding layer, a second-conductive-type intermediate band gap layer and a second-conductive-type current diffusion layer, all of which are stacked on one side of a surface of a first-conductive-type semiconductor substrate, a first electrode formed on the other side of the surface of the first-conductive-type semiconductor substrate, and a second electrode formed partly on the second-conductive-type current diffusion layer, wherein a region of the second-conductive-type intermediate band gap layer just under the second electrode is removed, and the second-conductive-type current diffusion layer is stacked in the removal region on the second-conductive-type second cladding layer, and wherein a junction plane of the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer has an energy band structure of type II.
With this semiconductor light-emitting device having the above constitution, in the removal region of the second-conductive-type intermediate band gap layer, since the junction plane of the second-conductive-type current diffusion layer and the second-conductive-type second cladding layer becomes high in resistance due to the energy band structure of type II, the current flows to around the removal region, allowing ineffective currents flowing under the second electrode formed partly on the second-conductive-type current diffusion layer to be reduced so that the emission intensity is enhanced.
It is noted that the first electrode formed on the other side of the surface of the first-conductive-type semiconductor substrate may be either a partial electrode or a full electrode
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MEMS 
