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Semiconductor package having metal-pattern bonding and method of fabricating the same
| Details |
Inventors: Park, Kye Chan;
Assignee: Dongbu Electronics Co., Ltd. (Seoul, KR)
Primary Examiner: Ho; Hoai
Assistant Examiner: Ho; Tu-Tu
Attorney, Agent or Firm: Keefer; Timothy J. Wildman, Harrold, Allen & Dixon
A semiconductor package including a semiconductor chip having bonding pads respectively arranged in a line adjacent to four sides of the upper surface; gold bumps formed on each bonding pad; a glass substrate which is made by forming metal patterns, the metal pattern including an inner pattern electrically connected to the bonding pad of the semiconductor chip through the gold bumps, an outer pattern, and a connecting pattern between the inner pattern and the outer pattern: a Dam having a frame-shape on the connecting pattern and surrounding the inner patterns; sealing material sealing the space between the glass substrate around the semiconductor chip and solder balls attached on the outer patterns of each metal pattern. |
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DETAILED DESCRIPTION FIG.
3 is a cross-sectional view illustrating a semiconductor package according to the embodiments of the present invention.
As illustrated, there are provided a semiconductor chip (30) having bonding pads (30a) and a glass substrate (40) having formed metal patterns (35) thereon corresponding to the bonding pads (30a).
Here, the semiconductor chip (30) and the glass substrate (40) are arranged so that the bonding pads (30a) and the metal pattern (35) are put opposite each other.
One side (31: hereinafter, referred as inner pattern) of the bonding pad (30a) and the metal pattern is bonded and electrically connected by the gold bump (41) formed on the bonding pad 10 (30a).
A solder ball (43) is attached on the other side (33: hereinafter, referred as outer pattern) of the metal pattern, thereby functioning as a mounting means on a mother board.
The space between the glass substrate (40) around the semiconductor chip (30) to the Dam (36) except for the outer pattern (33) of the metal pattern (35) is sealed with sealing material (42) composed of epoxy or resin of polymer type.
As the semiconductor chip is CCD, a color filter is formed on an active area of the upper surface thereof.
Although it is not shown, the bonding pads (30a) are respectively arranged in a line adjacent to four sides of upper surface of the semiconductor chip (30).
The gold bump (41) has a height of 50.
about.
175 .
mu.
m and a diameter of 50.
about.
100 .
mu.
m.
The sealing material (42) has a characteristic of curing at a temperature of 70.
about.
120.
degree.
C.
, such as epoxy or resin of polymer type.
A composition rate of tin to lead is 60.
about.
80 to 40.
about.
20 wt % in the solder ball (43) and silver, gold, chrome or cobalt is used as a dopant to increase reliability.
The size of the dopant is about 10 to 40 mil.
As shown in FIG.
4, the metal patterns (35) are formed on the position corresponding to each bonding pad of semiconductor chip and have a frame-shape, that is, the Dam (36) surrounds the inner pattern (31) of the metal pattern (35)
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MEMS 
