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Semiconductor photo detector containing crystalline amplification layer
| Details |
Inventors: Nakamura, Takeshi; Kyozuka, Shinya; Yamada, Takayuki; Miyamoto, Yasuaki;
Assignee: Fuji Xerox Co., Ltd. (Tokyo, JP)
Primary Examiner: Munson; Gene M.
Assistant Examiner:
Attorney, Agent or Firm: Oliff & Berridge, PLC
Described is a semiconductor photo detector comprising, between a lower electrode and an upper electrode, an optical absorption layer which generates photo carriers, receiving light and an amplification layer which amplifies the photo carriers so generated. In the semiconductor photo detector, the amplification layer is formed of a well layer which causes an avalanche phenomenon and a barrier layer which has a band gap larger than that of the optical absorption layer. The well layer is formed of a crystal substance, by which at the interface with the barrier layer, the energy value of the conduction band of the photo carriers in the well layer is lower than that in the barrier layer and at the same time, the difference in the energy value of the conduction band between the well layer and the barrier layer is larger than the band gap between the valence band and the conduction band of the well layer. |
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DETAILED DESCRIPTION With the forgoing in view, the present invention has been completed.
An object of the present invention is to provide a semiconductor photo detector having a high amplification factor at low driving voltage by using a thin-film semiconductor which enables a high amplification ratio and low voltage drive.
With a view to attaining the above object, the amplification layer for amplifying photo carriers is constructed as follows: (i) an amplification layer is formed using a crystal substance and the mean free path of electrons is improved substantially at the time when electrons transfer within the amplification layer having improved film quality, whereby an improvement in the amplification factor is brought about; or (ii) the amplification layer is formed from a barrier layer and a well layer made of a crystal substance so that electrons receive energy at the interface therebetween, which makes it possible to improve the mean free path of electrons substantially, thereby bringing about an improvement in the amplification factor.
The film quality of the amplification layer is improved by crystallizing the amplification layer wholly or partially.
Described specifically, the present invention corresponding to the above construction (i) is characterized by that in the semiconductor photo detector having, between a pair of electrodes, at least one of said electrodes having a light transmitting property, an optical absorption layer which generates photo carriers, receiving light, and an amplification layer which amplifies the photo carriers so generated, said amplification layer is formed of a crystal substance obtained by crystallizing an amorphous film after stacking the film.
The process for the fabrication of the above-described semiconductor photo detector is characterized by that it is equipped with a stacking step for stacking a pair of electrodes, an optical absorption layer and an amplification layer one after another, at least said amplification layer being stacked in an amorphous condition; and a crystallizing step for crystallizing said amplification layer in a high-temperature atmosphere subsequent to stacking of said amplification layer in said stacking step
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MEMS 
