Semiconductor sensor of electrostatic capacitance type

DETAILED DESCRIPTION It is an object of the invention to provide a semiconductor sensor made by simple manufacturing processes and to which a signal processing circuit and a control circuit can be easily connected and which is a compact sensor of a high performance.
Another object of the invention is to provide a semiconductor sensor comprising a semiconductor substrate including a conductive or semiconductor surface and an insulative surface and a pair of conductive members provided on the conductive or semiconductor surface of the substrate, wherein there is constructed a sensor section in which at least one of the pair of conductive members can be deformed and an electrostatic capacitance between the pair of electrodes is variable, and the semiconductor substrate has a functional element which is electrically connected to the sensor section.
Still another object of the invention is to provide a semiconductor sensor comprising a semiconductor substrate including a conductive or semiconductor surface and an insulative surface and a sensor section including a pair of conductive members arranged on the conductive or semiconductor surface of the substrate, wherein at least one of the pair of conductive members can be deformed and at least one of the pair of conductive members is an epitaxial grown layer.
Further another object of the invention is to provide a semiconductor sensor in which a conductive film in a semiconductor device is used as an electrode for detection having a sufficient mechanical strength and can be easily electrically connected to elements for a signal processing circuit and a control circuit and having improved reliability.
According to a manufacturing method of a semiconductor sensor of the invention, after an IC is formed onto the substrate, the semiconductor device can be formed by a simple processing step of merely selectively forming an electrode, so that the yield rises and the costs can be also reduced.