 Semiconductor photodiode |
| What is claimed is: 1. A semiconductor photodiode, comprising: a substrate formed of one of an n-... |
|
| Multiple color detection elevated pin photo diode active pixel sensor |
| The present invention is a color detection active pixel sensor which provides efficient absorption ... |
|
| Luminance-priority electronic color image sensor |
| What is claimed is: 1. A luminance priority color sensor comprising: a semiconductor substrate ... |
|
| Process for integration of a high dielectric constant gate insulator layer in a CMOS device |
| It is an object of this invention to fabricate a complimentary metal oxide semiconductor (CMOS) ... |
|
| Semiconductor device and a method of manufacturing the same |
| The present invention is made to solve such disadvantages as described above and contemplates a ... |
|
| Method for integrating anti-reflection layer and salicide block |
| A principal object of the present invention is to provide a method for integrating fabricating ... |
|
| CMOS image sensor and manufacturing method thereof |
| In consideration of the above circumstances, an object of the present invention is to provide a CMOS... |
|
| Photovoltaic component and module |
| OF THE INVENTION An advantage of the method according to the present invention is that no grooves ... |
|
| Methods for fabricating monolithic device containing circuitry and suspended microstructure |
| According to a first aspect of the invention, a process for fabricating a monolithic device is ... |
|
|
Sensitivity control for nanotube sensors
| Details |
Inventors: Bradley, Keith; Collins, Philip G.; Gabriel, Jean-Christophe P.; Gruner, George; Star, Alexander;
Assignee: Nanomix, Inc. (Emeryville, CA)
Primary Examiner: Thompson; Craig A.
Assistant Examiner:
Attorney, Agent or Firm: Nanomix, Inc., Dennis; Robert F.
Nanostructure sensing devices for detecting an analyte are described. The devices include nanostructures connected to conductive elements, all on a substrate. Contact regions adjacent to points of contact between the nanostructures and the conductive elements are given special treatment. The proportion of nanostructure surface area within contact regions can be maximized to effect sensing at very low analyte concentrations. The contact regions can be passivated in an effort to prevent interaction between the environment and the contact regions for sensing at higher analyte concentrations and for reducing cross-sensing. Both contact regions and at least some portion of the nanostructures can be covered with a material that is at least partially permeable to the analyte of interest and impermeable to some other species to tune selectivity and sensitivity of the nanostructure sensing device. |
|
DETAILED DESCRIPTION In accordance with one aspect of the present invention an electronic system for detecting analytes is provided.
The system includes a signal control and processing unit in communication with at least one nanostructure sensing device.
The nanostructure sensing device circuit comprises an electrical supply, a meter and a nanostructure sensing device connected together in the circuit.
The nanostructure sensing device comprises at least one nanostructure connected to at least two conductive elements, all disposed over a substrate.
There are contact regions adjacent to the connections between the conductive elements and the nanostructure, and inhibiting material covering at least the contact regions.
In one arrangement, the electronic system includes functionalization of at least one nanostructure sensing device.
In another arrangement, the functionalization for a first nanostructure sensing device is different from the functionalization for a second nanostructure sensing device.
In accordance with another aspect of the invention a nanostructure sensing device for detecting an analyte is provided.
The nanostructure sensing device comprises at least one nanostructure connected to at least two conductive elements, all disposed over a substrate.
There are contact regions adjacent to the connections between the conductive elements and the nanostructure, and inhibiting material covering at least the contact regions.
The inhibiting material is impermeable to at least one chemical, biochemical, or biological species.
The nanostructure sensing device can further comprise a gate electrode.
In one arrangement, there can be a trench in the substrate below at least the at least one nanostructure.
In one arrangement, a portion of the nanostructure is at least partially free of inhibiting material.
The inhibiting material may be impermeable to the analyte of interest.
The inhibiting material may be impermeable also to such species as moisture, oxygen, ammonia, and nitrous oxide.
In another arrangement, the inhibiting material covers both the contact regions and at least a substantial portion of the nanostructure
|
| Related patents |
|
|
Method of etching crystalline material with etchant injection inlet
The present invention has been accomplished in view of the various points as described above, and its object is to provide a fine working method of a crystalline ...
|
|
|
Selective formation of porous silicon
OF THE INVENTION The invention is based on forming a latent pattern in the surface of a silicon substrate that on exposure to etchant forms a pattern of porous silicon. ...
|
|
|
Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices
The ability to synthesize Si based materials with new optical, photonic and electronic properties is greatly desired. Unfortunately, despite considerable effort, Si ...
|
|
|
Methodology for measuring and controlling film thickness profiles
The invention improves the control of film thicknesses within semiconductor manufacturing processes by evaluating an entire profile of a film layer (as opposed to an ...
|
|
|
Keepers for MRAM electrodes
A magnetic memory array, preferably comprising an MRAM, with a series of top electrodes in contact with a magnetic keeper on at least one surface, a series of bottom ...
|
|
|
All metal giant magnetoresistive memory
According to the present invention, a memory technology is provided which is based on structures which exhibit the property of giant magnetoresistance (GMR), and which ...
|
|
|
Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
OF THE DRAWING FIG. 1 illustrates a top view of a portion of a magneto-electronic component 100. As an example, magneto-electronic component 100 can be a magnetic ...
|
|
|
Methods of forming magnetoresisitive devices
In one aspect, the invention encompasses a method of forming a magnetoresistive device. A stack is formed, with the stack comprising a first magnetic layer, a second ...
|
|
|
Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
Briefly described, and in accordance with a preferred embodiment thereof, the present invention relates to a structure of an electronic package of photo-sensing ...
|
|
|
Electrically programmable resistance cross point memory
Accordingly, a memory structure is provided, which comprises a substrate, a plurality of bottom electrodes overlying the substrate, a plurality of top electrodes ...
|
|
|
MEMS 
