Single-poly 2-transistor based fuse element

DETAILED DESCRIPTION The present invention achieves technical advantages as an electrically programmable transistor fuse having a source and drain disposed in a semiconductor substrate and further having a double-gate arrangement disposed in a single layer of polysilicon in which one gate is capacitively coupled to the drain region.
The transistor further includes a coupling device adapted to increase the capacitive coupling of the one gate and the drain region for enabling reduction in fuse programming voltage, wherein programming of the transistor fuse is effectuated via application of a voltage signal to the drain in which the voltage signal is less than the junction breakdown of the transistor fuse.