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Solid-state image-sensing device and method for producing the same
| Details |
Inventors: Suzuki, Ryoji; Ueno, Takahisa; Sumi, Hirofumi; Mabuchi, Keiji;
Assignee: Sony Corporation (Tokyo, JP)
Primary Examiner: Ngo ; Ngan V.
Assistant Examiner:
Attorney, Agent or Firm: Sonnenschein, Nath & Rosenthal
A solid-state image-sensing device has pn-junction sensor parts isolated corresponding to pixels by a device isolation layer. The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer. When the device is operating, a depletion layer of each sensor part spreads to the first semiconductor well region, which is beneath each of the sensor parts. |
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DETAILED DESCRIPTION Accordingly, it is an object of the present invention to provide a solid-state image-sensing device designed so that photoelectric conversion efficiency in sensor parts can be increased.
It is another object of the present invention to provide a solid-state image-sensing device designed so that a dark current resulting from leakage current can be reduced, and to provide a method for producing the device.
To these ends, according to an aspect of the present invention, the foregoing objects are achieved through provision of a solid-state image-sensing device having pn-junction sensor parts isolated corresponding to pixels by a device isolation layer.
The solid-state image-sensing device includes a first-conductivity-type second semiconductor well region formed between a first-conductivity-type first semiconductor well region and the device isolation layer.
In the device, when the device is operating, a depletion layer of each of the sensor parts spreads to the first semiconductor well region, which is beneath each of the sensor parts.
Preferably, the second semiconductor well region is simultaneously formed with the semiconductor well regions formed after the formation of the device isolation layer in a CMOS transistor.
According to another aspect of the present invention, the foregoing objects are achieved through provision of a solid-state image-sensing device having pn-junction sensor parts isolated corresponding to pixels by a device isolation layer resulting from local oxidation.
The solid-state image-sensing device includes a semiconductor region of a conductivity type opposite to the conductivity type of a charge accumulating region of each of the sensor parts, and the semiconductor region is formed between the charge accumulating region of each sensor part and the device isolation layer.
Preferably, the solid-state image-sensing device further includes a second semiconductor well region formed between the device isolation layer and a first semiconductor well region beneath the device isolation layer, and when the device is operating, the depletion layer of each of the sensor parts spreads to the first semiconductor well region, which is beneath each of the sensor parts
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MEMS 
