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Solid state image sensor and method for fabricating the same
| Details |
Inventors: Murakami, Ichiro; Nakashiba, Yasutaka;
Assignee: NEC Corporation (Tokyo, JP)
Primary Examiner: Clark; Sheila V.
Assistant Examiner: Tran; H. D.
Attorney, Agent or Firm:
In a solid state image sensor comprising a plurality of photoelectric conversion regions and a plurality of transfer regions which are formed in a principal surface of a semiconductor substrate, and a plurality of transfer electrodes formed above the transfer regions, a first insulating film, an antireflection film and a second insulating film are formed in the named order on the photoelectric conversion regions. The antireflection film has a refractive index larger than that of the second insulating film but smaller than that of the semiconductor substrate. The stacked film composed of the first insulating film, the antireflection film and the second insulating film, is formed, in the transfer regions, to extend over the transfer electrode which is formed a third insulating film formed on the semiconductor substrate. Preferably, an opening is formed to penetrate through the antireflection film, at a position above the transfer electrode, and after the second insulating film is formed, a sintering is carried out in a hydrogen atmosphere. |
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DETAILED DESCRIPTION Accordingly, it is an object of the present invention to provide a solid state image sensor having an elevated sensitivity without influencing the driving characteristics of the transfer electrode, and a method for fabricating the solid state image sensor.
Another object of the present invention is to provide a solid state image sensor having an elevated sensitivity and a reduced dark current, without influencing the driving characteristics of the transfer electrode, and a method for fabricating the solid state image sensor.
The above and other objects of the present invention are achieved in accordance with the present invention by a solid state image sensor comprising a plurality of photoelectric conversion regions and a plurality of transfer regions which are formed in a principal surface of a semiconductor substrate, and a plurality of transfer electrodes formed above the transfer regions, wherein the improvement comprises a first insulating film, an antireflection film and a second insulating film formed in the named order on each of the photoelectric conversion regions, the antireflection film having a refractive index larger than that of the second insulating film but smaller than that of the semiconductor substrate, and the stacked film composed of the first insulating film, the antireflection film and the second insulating film being formed, in the transfer regions, to extend over the transfer electrode which is formed on a third insulating film formed on the semiconductor substrate.
In one embodiment, the antireflection film has an opening formed to penetrate through the antireflection film, at a position above the transfer electrode.
The first insulating film is formed of a silicon oxide film.
Preferably, the first insulating film is formed of a silicon oxide film formed by a LPCVD process.
Alternatively, the first insulating film is formed of a silicon oxide film which is formed by a LPCVD process and then heat-treated at a temperature higher than a growth temperature in the LPCVD process
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MEMS 
