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Home MEMS Solid-state-image-sensor-unit-with-wide-dynamic-range-and-high-resolution

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 Solid state image sensor unit with wide dynamic range and high resolution

Details
Inventors: Kawai, Shinichi; Nakashiba, Yasutaka;
Assignee: NEC Corporation (Tokyo, JP)
Primary Examiner: Munson; Gene M.
Assistant Examiner:
Attorney, Agent or Firm:

In a solid state image sensor unit which includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with said first semiconductor regions substantially isolated electrically from each other. The solid state image sensor unit comprises a connection member formed on the substrate surface for supplying a reference potential to the first semiconductor regions in common.

DETAILED DESCRIPTION It is therefore an object of this invention to provide a solid state image sensor unit in which the plurality of scanning directions of image capture can be arbitrarily selected as a matter of course, the voltage of the first semiconductor region in the central unit section for performing photoelectric conversion and charge transfer is stable, and dynamic range is wide and resolution is high.
A solid state image sensor unit to which this invention is applicable includes a substrate having a substrate surface and a plurality of first semiconductor regions formed on the substrate surface along a predetermined direction of the substrate surface with the first semiconductor regions substantially isolated electrically from each other.
The solid state image sensor unit comprises a connection member formed on the substrate surface for supplying a reference potential to the first semiconductor regions in common.



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