|
|
Multi-layered gate for a CMOS imager
The present invention provides a multi-layered gate stack process for use in fabricating a pixel sensor cell. The multi-layered gates have multiple layers including a ...
|
|
|
Solid-state imaging device
It is an object of the present invention to provide a solid-state imaging device that can raise detection sensitivity, raise output conversion efficiency, raise ...
|
|
|
CMOS image sensor capable of increasing punch-through voltage and charge integration of photodiode, and method for forming the same
The present invention is intended to overcome the above described disadvantages of the conventional technique. Therefore it is an object of the present invention to ...
|
|
|
Light-emitting semiconductor device using group III nitrogen compound
OF THE PREFERRED EMBODIMENT The invention-will be more fully understood by reference to the following examples. EXAMPLE 1 FIG. 1 shows a LED 10 embodied in Example 1. I...
|
|
|
Robust Group III light emitting diode for high reliability in standard packaging applications
The present invention is a physically robust light emitting diode that offers high reliability in standard packaging and will withstand high temperature and high ...
|
|
|
Process for manufacture of thick film hydrogen sensors
Accordingly, is an object of the present invention to provide a new and improved system for thick film production of palladium hydrogen sensing elements with enhanced ...
|
|
|
Hydrogen sensor apparatus and method of fabrication
OF THE INVENTION Referring to FIG. 1, one type of commercial hydrogen sensor apparatus 10 comprises a blue light source 13, an optical fiber 11 having a thin film ...
|
|
|
Phased micro analyzer IV
What is claimed is: 1. A fluid analyzer comprising: a concentrator having a first solid-state thin-film heater-adsorber support channel of solid support; a phased heater ...
|
|
|
Method for forming Cu In Se.sub.2 films
What is claimed is: 1. A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of ...
|
|
|
Rapid process for producing a chalcopyrite semiconductor on a substrate
This object is achieved, according to the invention, by a process for producing a chalcopyrite semiconductor of the type ABC.sub.2, where A is copper, B is indium or ...
|