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Solid-state imaging device
| Details |
Inventors: Furumiya, Masayuki; Ohkubo, Hiroaki; Nakashiba, Yasutaka;
Assignee: NEC Electronics Corporation (Kanagawa, JP)
Primary Examiner: Flynn; Nathan J.
Assistant Examiner: Mandala, Jr.; Victor A.
Attorney, Agent or Firm: Young & Thompson
A solid-state imaging device such as a CMOS image sensor includes photodiode portions that are designed for both improving sensitivity and reducing crosstalk of electrical charge to adjacent pixels. A p-type layer, which has an impurity concentration that is lower than that of a substrate p.sup.+ -layer, is formed on the substrate p.sup.+ -layer which is a p-type silicon semiconductor substrate of high impurity concentration. An n-type photoelectric conversion region is provided at a position on the upper side of the p-type layer. By means of this configuration, of the photoelectrons that are generated in the p-type layer, electrons that diffuse in the direction of the substrate are reliably captured in substrate p.sup.+ -layer and annihilated by recombination. |
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DETAILED DESCRIPTION It is an object of the present invention to provide a solid-state imaging device that can raise detection sensitivity, raise output conversion efficiency, raise photoelectric conversion efficiency, extend the depletion layer, maintain the isolation characteristics between pixels, and reduce the occurrence of crosstalk.
The object of the present invention is realized by a solid-state imaging device which includes: a substrate layer which is composed of a semiconductor of a first conductive type; a semiconductor layer of the first conductive type which is provided on the substrate layer; and a photoelectric conversion region of a second conductive type, which is the opposite conductive type of the first conductive type, provided on the semiconductor layer; wherein the impurity concentration of the substrate layer is higher than the impurity concentration of the semiconductor layer.
A low-impurity concentration semiconductor layer of the first conductive type having a lower impurity concentration than the semiconductor layer may be provided between the substrate layer and the semiconductor layer.
In a case in which the low-impurity concentration semiconductor layer is provided, the impurity concentration of the low-impurity concentration semiconductor layer is preferably lower than the impurity concentration of the photoelectric conversion region.
The solid-state imaging device of the present invention may further be provided with a peripheral circuit semiconductor layer of the first conductive type that has a higher impurity concentration than the semiconductor layer and that is formed on the semiconductor layer at least below transistors in pixels.
In addition, from the standpoint of suppressing sensitivity to near-infrared light, the distance from the surface of the main plane of the semiconductor to the surface of the semiconductor layer on the substrate layer side is preferably a minimum of 2 .
mu.
m and a maximum of 10 .
mu.
m.
In the present invention, at least one of the semiconductor layer and the low-impurity density semiconductor layer is preferably formed by epitaxial growth
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MEMS 
