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MEMS

Solid-state-imaging-device

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Solid state imaging device

Details

Inventors: Matsumoto, Kazuya;
Assignee: Olympus Optical Co., Ltd. (Tokyo, JP)
Primary Examiner: Mancuso; Joseph
Assistant Examiner: Ho; Tuan V.
Attorney, Agent or Firm: Armstrong, Westerman, Hattori, McLeland & Naughton

A solid state imaging device in which a protection film which is transparent with respect to visible light is formed on a pixel array in which a multiplicity of pixels, each of which includes at least a light receiving portion and an accumulating portion, are arranged and which has a microlens array which is composed of a multiplicity of microlenses selectively disposed on said protection film to correspond to each of the light receiving pixels and made of organic or inorganic material, the solid state imaging device being constituted in such a manner that the optical axis and the focal point of each of microlens are present in the high electric field region of the light receiving portion and the accumulating portion of each of the pixels, the high electric field region being a region in which an avalanche phenomenon takes place.

DETAILED DESCRIPTION An object of the present invention is to provide a solid state imaging device having a conventional microlens capable of realizing a high sensitivity.
In order to achieve the above-described object, according to one aspect of the present invention, there is provided a solid state imaging device having a pixel array in which a multiplicity of pixels, which include at least a light receiving portion and an accumulating portion, are arranged, the solid state imaging device comprising: a protection film applied on the pixel array and transparent with respect to visible light; and microlens arrays selectively disposed on the protection film correspondingly to each of the light receiving pixels and made of organic or inorganic material, wherein each of the microlens arrays is formed in such a manner that its optical axis and the focal point are present in a high electric field applied region in the light receiving portion and the accumulating portion of each of the pixels.
As a result of the arrangement of the structure in which the optical axis and the focal point of the microlens array are present in a high electric field applied region in each of the pixels, photocarriers generated in the light receiving portion due to light beams converged by high aperture factor are avalanche multiplied in a high electric field and thereby the light generating carriers can be amplified before they are accumulated.
Consequently, a high sensitive solid state imaging device can be realized.
Other and further objects, features and advantages of the invention will be appear more fully from the following description.

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