 Semiconductor device |
| What is claimed is: 1. A semiconductor device utilizing independent and bead-like spherical ... |
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| Lighting device |
| Therefore, with the foregoing in mind, it is an object of the present invention to provide a ... |
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| Method for fabricating semiconductor thin film |
| However, a method for crystallizing an amorphous silicon film by heat treatment in the prior art ... |
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| Semiconductor device having doped polycrystalline layer |
| The present invention has been made to eliminate the above-mentioned problems, and an object of the ... |
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| Method for fabricating a semiconductor device |
| According to one aspect of the invention, a method for fabricating a semiconductor device including ... |
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| Semiconductor device and manufacturing method for the same |
| An object of the present invention is to form a thin film semiconductor layer having a very low ... |
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| Method of crystallizing an amorphous film |
| Accordingly, the present invention is directed to a method for crystallizing an amorphous film that ... |
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| Semiconductor light-emitting device and method for manufacturing thereof |
| Accordingly, an object of the present invention is to provide a semiconductor light-emitting device,... |
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| Light-emitting device |
| In view of the above, the present invention has an object to provide a light-emitting device in ... |
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Solid-state imaging device
| Details |
Inventors: Ishida, Tomohisa; Ohkouchi, Naoki; Suzuki, Satoshi; Juen, Masahiro; Isogai, Tadao;
Assignee: Nikon Corporation (Tokyo, JP)
Primary Examiner: Ngo; Ngan V.
Assistant Examiner:
Attorney, Agent or Firm: Klarquist Sparkman Campbell Leigh & Whinston, LLP
A photoelectric conversion device suitable for use as an element of a photodetector array includes a photodiode for generating a first signal charge in response to incident light, an output unit including a JFET, and at least one transistor having an electrode that generates a second signal charge in response to incident light. The first and second signal charges may be output separately or combined. The second signal charge, or the first and second signal charges combined, may be monitored during an exposure time to determine the desired end of the exposure. An image sensor array may have one or more pixels with such light monitoring capability. The output signal for monitoring the light may be output over a reset drain interconnection, directly from the monitoring pixel or through other pixels via inter-pixel MOSFETS. Exposure time may be controlled, by timing a shutter or a strobe or the like, based on the monitored accumulation of signal charge during exposure. Microlenses may be provided on-chip to increase the effective aperture ratio of the array. The microlenses are designed to avoid interfering with the incident light used for monitoring. Resulting pixel-to-pixel variations in effective aperture ratio, if any, may be electronically compensated. |
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DETAILED DESCRIPTION It is an object of the present invention to overcome the problems in the prior art and to provide photoelectric conversion devices and image sensor arrays comprised thereof and image capture apparatus employing such arrays, which allow a sharp image to be stably obtained despite changes in the brightness of the surroundings.
This is achieved by automatically adjusting the exposure time in accordance with the environment in which the photoelectric conversion apparatus is placed.
It is another object of the invention to increase the light-receiving area and/or effective light-receiving in each pixel in order to improve the efficiency of the photoelectric conversion, and to allow a sharp photosignal to be obtained with a low quantity of light.
It is still another object of the invention to provide photoelectric conversion devices and photoelectric conversion apparatus which can efficiently detect a wide range of wavelengths of incident light according to its spectral components.
In order to achieve these objects, the present invention encompasses a light-receiving device, useful as a pixel element in a photodetector array.
The device includes a light-receiving element that generates, in response to incident light, a first signal charge corresponding to the incident light.
The light-receiving element is preferably a photodiode.
The device further includes at least a first transistor structured and arranged such that at least a first electrode thereof itself generates, in response to incident light, a second signal charge corresponding to the incident light.
The first and second signal charges may be combined (added together, summed) for output, or may be output individually from the device.
If the signal charges are added, the effective light gathering area and the corresponding light gathering power of the device is increased.
If the signal charges are output or detected individually, the use of color filters allows increased spectral information to be detected by a single device
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MEMS 
